Efficient Direct Reduction of Graphene Oxide by Silicon Substrate

Abstract

Graphene has been studied for various applications due to its excellent properties. Graphene film fabrication from solutions of graphene oxide (GO) have attracted considerable attention because these procedures are suitable for mass production. GO, however, is an insulator, and therefore a reduction process is required to make the GO film conductive. These reduction procedures require chemical reducing agents or high temperature annealing. Herein, we report a novel direct and simple reduction procedure of GO by silicon, which is the most widely used material in the electronics industry. In this study, we also used silicon nanosheets (SiNSs) as reducing agents for GO. The reducing effect of silicon was confirmed by various characterization methods. Furthermore, the silicon wafer was also used as a reducing template to create a reduced GO (rGO) film on a silicon substrate. By this process, a pure rGO film can be formed without the impurities that normally come from chemical reducing agents. This is an easy and environmentally friendly method to prepare large scale graphene films on Si substrates.

Reduced Graphene Oxide Thin Film on Conductive Substrates by Bipolar Electrochemistry

“…The D peak is ascribed to the A 1 g breathing modes of carbon atoms aromatic rings that are induced by defects, and the G peak originates from the E 2 g Raman allowed optical phonon at the Brillouin zone center due to bond stretching of carbon atom pairs in both rings and chains. The D to G peak intensity ratio, which is a measure of degree of disorder and is inversely proportional to the average lateral size of the sp 2 clusters, was found to be 0.85 as reported elsewhere 50 . Second-order Raman scattering denoted by 2D is observed at 2707 cm −1 (approximately twice the energy of the D mode).…”

Effect of Ag/rGO on the Optical Properties of Plasmon-Modified SnO2 Composite and Its Application in Self-Powered UV Photodetector

“…The sharp diffraction peak for GO was absent in Ag/rGO, but a weak and broad peak appears in the range 20 • -30 • , attributed to a high-degree exfoliation of the graphene sheet in Ag/rGO due to the introduction of Ag NPs. The inter-layer spacing value of Ag/rGO was less than that of GO, suggesting the reduction of GO [53]. This result demonstrates that Ag NPs could be successfully incorporated with GO.…”

Growth and Self-Assembly of Silicon–Silicon Carbide Nanoparticles into Hybrid Worm-Like Nanostructures at the Silicon Wafer Surface

“…Likewise, the increase in the I(D)/I(G) ratio from 0.91 to 1.21 indicates the formation of numerous aromatic domains of smaller overall size in graphene [ 40 ]. Note that Chan Lee et al [ 41 ] reported the effective reduction of sprayed-GO films by Si.…”