Efficient dry etching of Si with vacuum ultraviolet light and XeF2 in a buffer gas

Li, B.; Streller, U.; Krause, H.; Twesten, I.; Schwentner, N.

doi:10.1063/1.359329

Cited by 24 publications

(8 citation statements)

References 27 publications

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“…It may be possible to achieve a continuous efficient etch process at these temperatures by simultaneously radiating the surface with photons or ions. For instance it was shown very recently by Li et al 29 that the room temperature Si/ XeF 2 -reaction can be enhanced significantly using VUVlight in the spectral range of 105-122 nm. Possibly this can even have a technological application as a low-damage direct-writing technique.…”

Section: Discussionmentioning

confidence: 99%

Si/XeF2 etching: Temperature dependence

Vugts

Verschueren

Eurlings

et al. 1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The temperature dependence of the Si͑100͒/XeF 2 etch reaction is studied quantitatively in a molecular beam setup. At a sample temperature of 150 K the reaction probability reaches unity initially, after which the XeF 2 condenses on the surface and blocks the etching process. For increasing temperatures the XeF 2 reaction probability initially decreases from 100% at 150 K down to 20% around 400 K, but for temperatures above 600 K it increases again up to 45% at 900 K. In a simple reaction scheme the high etch rate at low temperatures is explained by a XeF 2 -precursor, with an activation energy for desorption of 32Ϯ4 meV. Furthermore the increased etch rate at high temperatures is explained by the desorption of SiF 2 with an activation energy of 260Ϯ30 meV. The steady-state fluorine content of the SiF x reaction layer, measured using thermal desorption spectroscopy, reaches a maximum of 5.5 monolayers at 300 K. For increasing temperatures it decreases to a submonolayer coverage above 700 K. The temperature dependence of the formation of the reaction layer is described well by including the XeF 2 -precursor in a previously developed adsorption model.

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Section: Discussionmentioning

confidence: 99%

Si/XeF2 etching: Temperature dependence

Vugts

Verschueren

Eurlings

et al. 1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…From earlier measurements we know that for the Si/XeF 2 system all reaction products are volatile therefore q desorb is unity [6]. From the size of the pores etched by single photons, values of the order of 10 5 were estimated for q reac [12].…”

Section: Discussionmentioning

confidence: 99%

“…The experiments were carried out in the same way as that described in [3] and [6] and the chosen conditions are typical for high-quality reproduction at room temperature with high efficiency. Replicas of a mask (Ni mesh, width of wires 10 µm) placed on top of an n-type Si (100) wafer were generated by irradiation with dispersed light in the first order from a 3 m normal incidence monochromator (3m NIM2, BESSY I, Berlin) through an LiF window (cut off: 105 nm).…”

Section: Methodsmentioning

confidence: 99%

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Microstructuring of Si(100) by light induced dry etching in the VUV

Streller

Krabbe

Raaf

et al. 1998

Superlattices and Microstructures

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“…Etching of p-type Si induced by photo-generated carriers in a Cl 2 atmosphere was also obtained using a pulsed 308 nm XeCl excimer laser 10 and cw Ar þ and K þ lasers with various wavelengths. 11 Schwentner et al systematically investigated photo-induced etching of Cu [12][13][14][15] and GaAs 16 with Cl 2 , and etching of Si with XeF 2 [17][18][19] using synchrotron radiation in the vacuum UV (VUV) range. They found that photo-induced etching was strongly wavelength-dependent, with the maximum yield exhibited around 120 nm.…”

Section: Introductionmentioning

confidence: 99%

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

Zhu

Sridhar

Liu

et al. 2014

Journal of Applied Physics

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feed gases diluted in Ar (50%-50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br 2 /Ar and HBr/Cl 2 /Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Etching rates measured under MgF 2 , quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl 2 /Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45 with respect to h110i cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation. V

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Efficient dry etching of Si with vacuum ultraviolet light and XeF2 in a buffer gas

Abstract: Articles you may be interested inAmplification and surface topography in synchrotron radiation induced dry etching of Si with XeF2

Cited by 24 publications

References 27 publications

Si/XeF2 etching: Temperature dependence

Si/XeF2 etching: Temperature dependence

Microstructuring of Si(100) by light induced dry etching in the VUV

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

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