“…One of the issues concerns the deepening of the Mg-acceptor level, which would make it difficult to deposit the high-conductivity p-type layer [ 7 , 8 , 9 , 10 ]. In addition, the poor structural quality of the AlGaN epitaxial layers would cause dislocations and create non-radiative defects that destroy the internal quantum efficiency of the LEDs [ 11 , 12 , 13 , 14 , 15 ]. Furthermore, these devices currently display low light extraction efficiency and output power [ 16 , 17 , 18 , 19 ].…”