Ultraviolet-Cathodoluminescent 330 nm light source from a 2-inch wide CNT electron-beam emission under DC electric field

Kumar, Chandra Mohan Manoj; Shim, Sang Kyun; Cho, Moon Uk; Kim, Tae Kyoung; Kwak, Joon Seop; Park, Joonmo; Jang, Nakwon; Ryu, Sang‐Wan; Lee, Naesung; Lee, June Key

doi:10.1016/j.cap.2021.04.014

Cited by 3 publications

(14 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Finally, an adhesive tape and soft roller are employed for vertical alignment of nanotubes, providing their physical activation. This type of CNT e-emitters ensures a maximum output e-current of up to 5.5 mA in a cw-mode and a largest emitting surface diameter of up to 2 inches, as shown in Figure 9a [68]. Comparing two methods of CNT fabrication employing either direct selective growth using plasma-enhanced CVD or screen printing of CNT paste, one can highlight the positive and negative sides of each method.…”

Section: Field Emission (Cold) Electron Sourcesmentioning

confidence: 99%

“…Figure 8a shows typical current-voltage characteristics for all currents in the triode CNT e-emitter, measured in a continious wave (cw-) mode, and its photo (Figure 8b) with output fluorescent screen emitting under UVC-excitation [48]. Alternatively, CNT e-beam emitters may be fabricated using a complex multi-step process in which multi-walled СNT powder are first prepared by the thermal CVD [53,66,68]. The CNT have an outer diameter of 7 nm, approxiamtely 5 walls, and a length of more than 10 µm.…”

Section: Field Emission (Cold) Electron Sourcesmentioning

confidence: 99%

“…However, the very wide emission spectrum of such a UV emitter up to the visible range limits its application. In another paper published in 2021, Mohan et al [68] used a large-area CNT e-emitter, shown in Figure 9, in the development of UVA emitters based on GaN/AlGaN MQW structures. Figure 26 shows the CL spectra and the dependence of the output power on the pumping current for a UVAemitter based on a 18×{GaN(2.1 nm)/AlGaN(9 nm)} MQW structure emitting at 330 nm.…”

Section: Sub-watt Power Uv-emitters Cw-pumped By Large-area Cnt-based...mentioning

confidence: 99%

See 2 more Smart Citations

Electron-Beam Pumped UVC-Emitters Based on (Al, Ga)N Material System

Jmerik¹,

Kozlovsky²,

Wang³

2023

Preprint

View full text Add to dashboard Cite

Powerful emitters of the ultraviolet C (UVC) light in the wavelength range of 230-280nm are necessary for the development of effective and safe optical disinfection technologies, high-sensitive optical spectroscopy and non-line-of-sight optical communication. This review considers such UVC-emitters with electron-beam pumping of heterostructures with quantum wells in the (Al,Ga)N material system. The important advantages of these emitters include the absence of the critical problem of p-type doping and the possibility of achieving record (up to several tens of watts for peak values) output optical power values in the UVC range. The review consistently considers about a decade of world experience in the implementation of various UV emitters with various types of thermionic, field-emission, and plasma-cathode electron guns (sources) used to excite various designs of active (light-emitting) regions in heterostructures with quantum wells AlxGa1-xN/AlyGa1-yN (x = 0 − 0.5, y = 0.6 − 1) fabricated either by metal-organic chemical vapor deposition or by plasma-activated molecular beam epitaxy. Special attention is paid to the production of heterostructures with multiple quantum wells/two-dimensional(2D) quantum disks GaN/AlN with a monolayer (1ML ~ 0.25nm) thickness, which ensures a high internal quantum efficiency of radiative recombination in the UVC range, low elastic stresses in heterostructures, and a high output UVC-optical powers.

show abstract

Section: Field Emission (Cold) Electron Sourcesmentioning

confidence: 99%

Section: Field Emission (Cold) Electron Sourcesmentioning

confidence: 99%

Section: Sub-watt Power Uv-emitters Cw-pumped By Large-area Cnt-based...mentioning

confidence: 99%

See 1 more Smart Citation

Electron-Beam Pumped UVC-Emitters Based on (Al, Ga)N Material System

Jmerik¹,

Kozlovsky²,

Wang³

2023

Preprint

View full text Add to dashboard Cite

show abstract

“…A higher voltage (up to 7 kV) applied to the second far electrode (anode) determines the energy of the electrons bombarding the light-emitting structure located on this electrode. Most of the electrons emitted from the CNT cathode reach the anode at a typical distance between these electrodes of about 20 mm [71]. Several groups are currently intensively developing various types of large-area esources using field emission from carbon nanotubes (CNTs) distributed over the surface of various substrates (Si, stainless steel) up to two inches in diameter [50,55,58,[67][68][69][70][71].…”

Section: Field Emission (Cold) Electron Sourcesmentioning

confidence: 99%

“…Most of the electrons emitted from the CNT cathode reach the anode at a typical distance between these electrodes of about 20 mm [71]. Several groups are currently intensively developing various types of large-area esources using field emission from carbon nanotubes (CNTs) distributed over the surface of various substrates (Si, stainless steel) up to two inches in diameter [50,55,58,[67][68][69][70][71]. As a rule, these emitters use a triode electrode scheme, in which a lower voltage (1-2 kV) is applied to the first metal mesh electrode (gate) located close (less than 1mm) to the surface of the e-emitting cathode, as shown in Figure 7.…”

Section: Field Emission (Cold) Electron Sourcesmentioning

confidence: 99%

Electron-Beam-Pumped UVC Emitters Based on an (Al,Ga)N Material System

2023

View full text Add to dashboard Cite

Powerful emitters of ultraviolet C (UVC) light in the wavelength range of 230–280 nm are necessary for the development of effective and safe optical disinfection technologies, highly sensitive optical spectroscopy and non-line-of-sight optical communication. This review considers UVC emitters with electron-beam pumping of heterostructures with quantum wells in an (Al,Ga)N material system. The important advantages of these emitters are the absence of the critical problem of p-type doping and the possibility of achieving record (up to several tens of watts for peak values) output optical power values in the UVC range. The review consistently considers about a decade of world experience in the implementation of various UV emitters with various types of thermionic, field-emission, and plasma-cathode electron guns (sources) used to excite various designs of active (light-emitting) regions in heterostructures with quantum wells of AlxGa1−xN/AlyGa1−yN (x = 0–0.5, y = 0.6–1), fabricated either by metal-organic chemical vapor deposition or by plasma-activated molecular beam epitaxy. Special attention is paid to the production of heterostructures with multiple quantum wells/two-dimensional (2D) quantum disks of GaN/AlN with a monolayer’s (1 ML~0.25 nm) thickness, which ensures a high internal quantum efficiency of radiative recombination in the UVC range, low elastic stresses in heterostructures, and high-output UVC-optical powers.

show abstract