In the last few years, lead halide (APbX3) perovskites, which are of interest for applications in photovoltaic and photonic devices, have demonstrated excellent optoelectronic performance. The structural characterization of APbX3 thin films using (scanning) transmission electron microscopy ((S)TEM) techniques can provide valuable information that can be used to understand their optoelectronic performance and device properties. However, since APbX3 perovskites are soft materials, their characterization using (S)TEM is challenging. Here, we study two APbX3 perovskite thin films: bulk CH3NH3PbI3, and nanoparticle (NP) CsPbBr3. Both specimen preparation methods and working conditions for analysis by (S)TEM are optimized. On the one hand, we show that CH3NH3PbI3 thin films grown by a one step method are composed of independent grains with random orientations. The growth method results in the formation of tetragonal perovskite films with good adherence to an underlying TiO2 layer and with a photoluminescence (PL) emission band that has a Gaussian shape and is centered at 775 nm. On the other hand, in the NP CsPbBr3 perovskite thin films the colloidal NPs, which are used as the building blocks of the film, are preserved by the deposition process. Small gaps are observed between adjacent NPs in the deposited film. The crystal structure is cubic, which is beneficial due its optimal band gap. The colloidal NPs shows similar absorption and PL in the thin film as in the colloidal solution, indicating good homogeneity and the absence of aggregation of NPs in the film. Care was required to avoid long electron irradiation times during these studies, even at a low voltage of 80 kV, as the material was observed to decompose through Pb segregation.