Efficient, Flexible, and Ultra‐Lightweight Inverted PbS Quantum Dots Solar Cells on All‐CVD‐Growth of Parylene/Graphene/oCVD PEDOT Substrate with High Power‐per‐Weight

Tavakoli, Mohammad Mahdi; Gharahcheshmeh, Meysam Heydari; Moody, Nicole; Bawendi, Moungi G.; Gleason, Karen K.; Kong, Jing

doi:10.1002/admi.202000498

Cited by 34 publications

(36 citation statements)

References 57 publications

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“…The power‐per‐weight calculation method is presented in the Supporting Information. To the best of our knowledge, this is the highest reported power‐per‐weight value for OPVs, [ 17 , 23 , 45 , 46 ] and in most cases even higher than those for other types of solar cells [ 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 ] (as shown in Figure 4 a ). Using ultrathin substrates makes devices ultralight and simultaneously enables OPVs with excellent flexibility and deformability.…”

Section: Resultsmentioning

confidence: 76%

Ultrathin and Efficient Organic Photovoltaics with Enhanced Air Stability by Suppression of Zinc Element Diffusion

et al. 2022

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Ultrathin (thickness less than 10 μm) organic photovoltaics (OPVs) can be applied to power soft robotics and wearable electronics. In addition to high power conversion efficiency, stability under various environmental stresses is crucial for the application of ultrathin OPVs. In this study, the authors realize highly air-stable and ultrathin (≈3 μm) OPVs that possess high efficiency (15.8%) and an outstanding power-per-weight ratio of 33.8 W g −1 . Dynamic secondary-ion mass spectrometry is used to identify Zn diffusion from the electron transport layer zinc oxide (ZnO) to the interface of photoactive layer; this diffusion results in the degradation of the ultrathin OPVs in air. The suppression of the Zn diffusion by a chelating strategy results in stable ultrathin OPVs that maintain 89.6% of their initial efficiency after storage for 1574 h in air at room temperature under dark conditions and 92.4% of their initial efficiency after annealing for 172 h at 85 °C in air under dark conditions. The lightweight and stable OPVs also possess excellent deformability with 87.3% retention of the initial performance after 5000 cycles of a compressing-stretching test with 33% compression.

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Section: Resultsmentioning

confidence: 76%

Ultrathin and Efficient Organic Photovoltaics with Enhanced Air Stability by Suppression of Zinc Element Diffusion

et al. 2022

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“…PEDOT is often spin‐coated with polystyrene sulfonate (PSS) to form PEDOT:PSS, [ 8,9 ] but PEDOT thin films can also be fabricated by electropolymerization, [ 10,11 ] in situ chemical polymerization, [ 12–15 ] vapor phase polymerization (VPP), [ 16–19 ] and oxidative chemical vapor deposition (oCVD). [ 20–26 ] For PEDOT, the highest value of σ to date, 8797 ± 1178 S cm −1 , was reported by Cho et al. [ 27 ] in single‐crystal nanowires grown by VPP at 50 °C using iron chloride (FeCl 3 ) as the oxidant.…”

Section: Introductionmentioning

confidence: 99%

Optimizing the Optoelectronic Properties of Face‐On Oriented Poly(3,4‐Ethylenedioxythiophene) via Water‐Assisted Oxidative Chemical Vapor Deposition

Gharahcheshmeh

Robinson

Gleason

et al. 2020

Adv Funct Materials

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Engineering the texture and nanostructure to improve the electrical conductivity of semicrystalline conjugated polymers must address the rate-limiting step for charge carrier transport. In highly face-on orientation, the charge transport between chains within a crystallite becomes rate-limiting, which is highly sensitive to the π-π stacking distance and interchain charge transfer integral. Here, face-on oriented semicrystalline poly(3,4-ethylenedioxythiophene) (PEDOT) thin films are grown via water-assisted (W-A) oxidative chemical vapor deposition (oCVD). Combining W-A with the volatile oxidant, antimony pentachloride, yields an optimized electrical conductivity of 7520 ± 240 S cm −1 , a record for PEDOT thin films. Systematic control of π-π stacking distance from 3.50 Å down to 3.43 Å yields an electrical conductivity enhancement of ≈1140%. The highest electrical conductivity also corresponds to minimum in Urbach energy of 205 meV, indicating superior morphological order. The figure of merit for transparent conductors, σ dc /σ op , reaches a maximum value of 94, which is 1.9× and 6.7× higher than oCVD PEDOT grown without W-A and utilizing vanadium oxytrichloride and iron chloride oxidizing agents, respectively. The W-A oCVD is single-step all-dry process and provides conformal coverage, allowing direct growth on mechanical flexible, rough, and structured surfaces without the need for complex and costly transfer steps.

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“…The energy barrier for electrons with EDT-PbS HTLs is only ≈0.17 eV and the hole mobility is ≈10 −4 cm 2 V −1 s −1 , which is not conducive to the further performance improvement of lead chalcogenide CQDSCs. [207] As there are other HTL materials for lead chalcogenide CQDSCs, including MoO x , [193,194] NiO, [208] CuI, [209] CuO x , [210] Spiro-OMeTAD, [211] graphdiyne, [212,213] and perovskite, [37] we summarize the performance of lead chalcogenide CQDSCs with different HTLs in Table 6.…”

Section: Wwwadvmatde Wwwadvancedsciencenewscommentioning

confidence: 99%

Open‐Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Liu

Xian

et al. 2021

Advanced Materials

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absorption coefficients, which can be used to capture the far-infrared of solar radiation. [13,14] This outperforms silicon-based and other solution-based semiconductor materials. Additionally, lead chalcogenide CQDSCs have the potential to break through the Shockley-Quesser limit, via multiple exciton generation. [15][16][17][18] In the past decade, lead chalcogenide CQDSCs have attracted abundant attention and their power conversion efficiencies (PCEs) have increased from ≈3% to ≈14%. [19][20][21] Moreover, the facile solution-processability (synthesis and ligand exchange) allows the production of solar cells by spraying, scraping, and roll-to-roll process, enabling great commercial potential. [22][23][24][25] Recently, some reports discussed the commercial viability of lead chalcogenide CQDSCs. [26,27] The results demonstrated that the cost of flexible lead chalcogenide CQDSCs can be as low as ≈0.94 $ per W, indicating the strong competitiveness of these solution-processability solar cells. To reach this low production cost, the PCEs of the CQDSCs are assumed to be 19% and the devices are assumed to be manufactured via a roll-toroll process. [27] Thus, it is still a great challenge for the commercialization of lead chalcogenide CQDSCs, and the low PCE is still the main obstacle for its market competitiveness.We summarize the main developments of lead chalcogenide CQDSCs (see Figure 1). In the early stage, the Schottky structure was used and it achieved the highest PCE of ≈5.2% in 2013. [28] But after 2014, there exist few reports of lead chalcogenide CQDSCs with the Schottky structure, due to the mismatch between optical absorption and charge extraction. [29] Subsequently, the n-p structure and depleted bulk heterojunction (DBH) structure have greatly improved the PCEs of lead chalcogenide CQDSCs. [30,31] N-p structure uses p-n junction to improve carrier extraction efficiency and reduce recombination, thus increasing the PCE of lead chalcogenide CQDSCs from ≈3% to above 9% in 2015. [19,32] Additionally, the absorption coefficient of lead chalcogenide CQDSCs reaches ≈10 6 cm −3 , which means that it is essential to use ≈1 μm solar absorber to fully absorb solar radiation. The DBH structure uses a bulk electron transport layer (ETL) to address the challenge of insufficient carrier diffusion length for the n-p structure, thus increasing the absorber thickness and greatly improving the short-circuit current (J sc ). [33][34][35] Through continued efforts, the PCE of the DBH structure has reached ≈10.8%. [36] To date, more research Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (V oc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high V oc loss severely limits the performance im...

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Efficient, Flexible, and Ultra‐Lightweight Inverted PbS Quantum Dots Solar Cells on All‐CVD‐Growth of Parylene/Graphene/oCVD PEDOT Substrate with High Power‐per‐Weight

Cited by 34 publications

References 57 publications

Ultrathin and Efficient Organic Photovoltaics with Enhanced Air Stability by Suppression of Zinc Element Diffusion

Ultrathin and Efficient Organic Photovoltaics with Enhanced Air Stability by Suppression of Zinc Element Diffusion

Optimizing the Optoelectronic Properties of Face‐On Oriented Poly(3,4‐Ethylenedioxythiophene) via Water‐Assisted Oxidative Chemical Vapor Deposition

Open‐Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

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