Efficient killer-defect control using reliable high-throughput SEM-ADC

Watanabe, Kenji; Takagi, Yuji; Obara, Kei; Okuda, Hironori; Nakagaki, Ryo; Kurosaki, T.

doi:10.1109/asmc.2001.925649

Cited by 14 publications

(12 citation statements)

References 5 publications

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“…For example, the proposed method should be evaluated on various semiconductor patterns in actual production lines with different processes and layouts. Moreover, we aim to utilize volume data from the estimated 3D surface as features for Automatic defect classification (ADC) [1], [22], which may diversify the classification categories and improve the accuracy of the classification process. As yield prediction and specification of process issues in a production line are still very difficult, the proposed technology is expected to enhance quick and highly precise process control capabilities via synthetic analysis of a combination of information, in addition to ADC, including defect distribution, defect composition, equipment history, etc.…”

Section: Discussionmentioning

confidence: 99%

Robust Surface Reconstruction in SEM Using Two BSE Detectors

Chen

Miyamoto

Kaneko

2013

IEICE Trans. Inf. & Syst.

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Deshan CHEN†a) , Nonmember, Atsushi MIYAMOTO † †b) , and Shun'ichi KANEKO †c) , Members SUMMARY This paper describes a robust three-dimensional (3D) surface reconstruction method that can automatically eliminate shadowing errors. For modeling shadowing effect, a new shadowing compensation model based on the angle distribution of backscattered electrons is introduced. Further, it is modified with respect to some practical factors. Moreover, the proposed iterative shadowing compensation method, which performs commutatively between the compensation of image intensities and the modification of the corresponding 3D surface, can effectively provide both an accurate 3D surface and compensated shadowless images after convergence. key words: scanning electron microscope (SEM), surface reconstruction, shadowing compensation, backscattering electron IntroductionThe scanning electron microscope (SEM) is a very important tool for observing micro-structure and has been widely used in the areas of medical observation, semiconductors, material analysis, etc. The need for three-dimensional (3D) surface measurements is significantly increasing. For instance, 3D surface information can provide valuable clues for inspecting and analyzing defects in products of semiconductor manufacturing processes, such as recognition of device patterns and defect regions, classification of defects in terms of the processes responsible for their generation (surface/embedded defects [1]) and the impact on electric properties (volume or shorting/disconnection defect), and specification and control of the issue process, etc.Attempts have been made to transform SEM into a 3D measuring tool for almost 30 years, and scientific research on 3D surface reconstruction in SEM continues to be intensively studied. Different approaches, which can be broadly classified into two groups, have been utilized. One popular group is generally referred to as the "stereometric" method [2]- [4], in which a pair of stereo images of a specimen at different inclination angles are taken, and the height or depth is determined by measuring the deviations of corresponding points on the two images. However, this method can only be applied to the measurements of surface points Manuscript received November 20, 2012. Manuscript revised April 19, 2013. † The authors are with the Graduate School of Information Science and Technology, Hokkaido University, Sapporo-shi, 060-0814 Japan.† † The author is with the Yokohama Research Laboratory, Hitachi, Ltd., Yokohama-shi, 244-0817 Japan.a) E-mail: chen@ssc.ssi.ist.hokudai.ac.jp b) E-mail: atsushi.miyamoto.ts@hitachi.com c) E-mail: kaneko@ssi.ist.hokudai.ac. where recognizable fine structures exist. In general, it cannot be used on smooth surfaces or to reconstruct a continuous surface profile at high magnification. The second group of approaches is the so-called "shape from shading" or "photometric stereo" method [5]- [10], in which multiple secondary or backscattered electron detectors (generally two or four) are symmetrically positioned a...

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Section: Discussionmentioning

confidence: 99%

Robust Surface Reconstruction in SEM Using Two BSE Detectors

Chen

Miyamoto

Kaneko

2013

IEICE Trans. Inf. & Syst.

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“…In the process of less than 10 nm, the new advanced CD-SEM technology is effectively applied to logic vias, complex overlay, HAR contacts, 3D morphology, etc. [ 415 , 416 , 417 ]…”

Section: Advanced Characterizations For Ultra-miniaturized Cmosmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

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“…High throughput SEM technology is a general term for the integrated application of multiple technologies, including immersion rocker objectives lens, focus tracking technology, charge control technology, and high-speed image acquisition system. Their application makes large-area high-precision scanning imaging a reality, and, compared to imaging speed of the traditional SEM, is more than 300 times faster, where the low-voltage resolution is up to the nanometer level [226].…”

Section: Advanced Characterization For Ultra-miniaturized Cmosmentioning

confidence: 99%

Miniaturization of CMOS

Radamson

Zhang

et al. 2019

Micromachines

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When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today’s 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

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Efficient killer-defect control using reliable high-throughput SEM-ADC

Cited by 14 publications

References 5 publications

Robust Surface Reconstruction in SEM Using Two BSE Detectors

Robust Surface Reconstruction in SEM Using Two BSE Detectors

State of the Art and Future Perspectives in Advanced CMOS Technology

Miniaturization of CMOS

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