Efficient light harvesting in hybrid quantum dot–interdigitated back contact solar cells <i>via</i> resonant energy transfer and luminescent downshifting

Krishnan, Chirenjeevi; Mercier, Thomas M.; Rahman, Tasmiat; Piana, Giacomo; Brossard, M.; Yagafarov, Timur; To, Alexander; Pollard, Michael E.; Shaw, Peter J.; Bagnall, Darren M.; Hoex, Bram; Boden, Stuart A.; Lagoudakis, Pavlos G.; Charlton, Martin D. B.

doi:10.1039/c9nr04003j

Cited by 19 publications

(11 citation statements)

References 28 publications

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“…As mentioned, the significant absorbance in the UV range and the high photon emission intensity at 528 nm are the well-assist factors for significantly increasing light absorption in the Si layer, which contributes to the J SC enhancement [23]. Besides, QDs is also recognized as its anti-reflective property so that the photon absorption can be increased, which induce the improvement in the carrier concentration and the photoconductivity in the solar cell [37][38][39][40].…”

Section: Resultsmentioning

confidence: 99%

Enhancement of Schottky Junction Silicon Solar Cell with CdSe/ZnS Quantum Dots Decorated Metal Nanostructures

et al. 2021

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Recently, in the solar energy society, several key technologies have been reported to meet a grid parity, such as cost-efficient materials, simple processes, and designs. Among them, the assistive plasmonic of metal nanoparticles (MNPs) integrating with the downshifting on luminescent materials attracts much attention. Hereby, Si-based Schottky junction solar cells are fabricated and examined to enhance the performance. CdSe/ZnS quantum dots (QDs) with different gold nanoparticles (Au NPs) sizes were incorporated on a Si light absorbing layer. Due to the light scattering effect from plasmonic resonance, the sole Au NPs layer results in the overall enhancement of Si solar cell’s efficiency in the visible spectrum. However, the back-scattering and high reflectance of Au NPs lead to efficiency loss in the UV region. Therefore, the QDs layer acting as a luminescent downshifter is deployed for further efficiency enhancement. The QDs layer absorbs high-energy photons and re-emits lower energy photons in 528 nm of wavelength. Such a downshift layer can enhance the overall efficiency of Si solar cells due to poor intrinsic spectral response in the UV region. The optical properties of Au NPs and CdSe QDs, along with the electrical properties of solar cells in combination with Au/QD layers, are studied in depth. Moreover, the influence of Au NPs size on the solar cell performance has been investigated. Upon decreasing the diameters of Au NPs, the blueshift of absorbance has been observed, cooperating with QDs, which leads to the improvement of the quantum efficiency in the broadband of the solar spectrum.

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Section: Resultsmentioning

confidence: 99%

Enhancement of Schottky Junction Silicon Solar Cell with CdSe/ZnS Quantum Dots Decorated Metal Nanostructures

et al. 2021

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“…The effect of photoactive layer thickness on optoelectronic device performance has been investigated in the literature, especially for solar cells ( Johnston et al, 2008 ; Kramer and Sargent, 2014 ; Yang et al, 2016 ; Krishnan et al, 2019 ). Regarding that, however, it is possible that the optoelectronic devices working in the biological medium have different dynamics.…”

Section: Resultsmentioning

confidence: 99%

Nanoengineering InP Quantum Dot-Based Photoactive Biointerfaces for Optical Control of Neurons

et al. 2021

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Light-activated biointerfaces provide a non-genetic route for effective control of neural activity. InP quantum dots (QDs) have a high potential for such biomedical applications due to their uniquely tunable electronic properties, photostability, toxic-heavy-metal-free content, heterostructuring, and solution-processing ability. However, the effect of QD nanostructure and biointerface architecture on the photoelectrical cellular interfacing remained unexplored. Here, we unravel the control of the photoelectrical response of InP QD-based biointerfaces via nanoengineering from QD to device-level. At QD level, thin ZnS shell growth (∼0.65 nm) enhances the current level of biointerfaces over an order of magnitude with respect to only InP core QDs. At device-level, band alignment engineering allows for the bidirectional photoelectrochemical current generation, which enables light-induced temporally precise and rapidly reversible action potential generation and hyperpolarization on primary hippocampal neurons. Our findings show that nanoengineering QD-based biointerfaces hold great promise for next-generation neurostimulation devices.

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“…The NRET mechanism mainly depends on three conditions 38,39 : that the degree of overlap between the emission wavelength of the donor and the absorption wavelength of the acceptor is large, that the directions between dipoles need to be parallel, and that the distance from the donor to the acceptor is small enough (less than 10 nm). Therefore, to utilize the NRET mechanism to improve the CCE of the system, the spatial distance between the QD and the active area of the micro-LED chip must be as small as possible.…”

Section: Non-radiative Energy Transfermentioning

confidence: 99%

“…A shorter distance between the donor and acceptor is important for efficient NRET. According to the report of H. Sahoo 38 , when the distance is less than 2 nm, the NRET efficiency is highest, while when the distance is larger than 10 nm, NRET fails to occur. Therefore, a large number of studies in micro-LED structures more suitable for NRET have been done 30,47−49 .…”

Section: Novel Structures Of Micro-ledmentioning

confidence: 99%

Recent developments of quantum dot based micro-LED based on non-radiative energy transfer mechanism

Fan¹,

Wu²,

Liu³

et al. 2021

OEA

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With regard to micro-light-emitting diodes (micro-LEDs), their excellent brightness, low energy consumption, and ultrahigh resolution are significant advantages. However, the large size of traditional inorganic phosphors and the number of side defects have restricted the practical applications of small sized micro-LEDs. Recently, quantum dot (QD) and nonradiative energy transfer (NRET) have been proposed to solve existing problems. QDs possess nanoscale dimensions and high luminous efficiency, and they are suitable for NRET because they are able to nearly contact the micro-LED chip. The NRET between QDs and micro-LED chip further improves the color conversion efficiency (CCE) and effective quantum yield (EQY) of full-color micro-LED devices. In this review, we discuss the NRET mechanism for QD micro-LED devices, and then nano-pillar LED, nano-hole LED, and nano-ring LED are introduced in detail. These structures are beneficial to the NRET between QD and micro-LED, especially nano-ring LED. Finally, the challenges and future envisions have also been described.

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Efficient light harvesting in hybrid quantum dot–interdigitated back contact solar cells via resonant energy transfer and luminescent downshifting

Abstract: In this paper,we propose a hybrid quantum dot (QD)/Solar cell configuration to improve the performance of IBC silicon solar cells through efficient utilisation of resonant energy transfer (RET) and luminescent downshifting (LDS).

Cited by 19 publications

References 28 publications

Enhancement of Schottky Junction Silicon Solar Cell with CdSe/ZnS Quantum Dots Decorated Metal Nanostructures

Enhancement of Schottky Junction Silicon Solar Cell with CdSe/ZnS Quantum Dots Decorated Metal Nanostructures

Nanoengineering InP Quantum Dot-Based Photoactive Biointerfaces for Optical Control of Neurons

Recent developments of quantum dot based micro-LED based on non-radiative energy transfer mechanism

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