Efficient modeling of thyristor static characteristics from device fabrication data

Roulston, D.J.; Nakhla, M.R.

doi:10.1109/t-ed.1979.19392

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B Z2fet Operation Based Partition1

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1980

2017

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Cited by 4 publications

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“…In this condition, there are alternating regions of N-p-n-P configuration in the thin silicon body resulting in three p-n junction formation, hence three diodes as shown in Fig.3. This resembles a "Thyristor", [11] [12] represented as a back to back bipolar transistors.…”

Section: B Z2fet Operation Based Partitionmentioning

confidence: 99%

Simulation based DC and dynamic behaviour characterization of Z2FET

Adamu-Lema

Duan

Navaro

et al. 2017

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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This work presents a TCAD investigation of the operation of a Z2FET device for memory application, where the TCAD model is well calibrated to experimental hysteresis curves. The DC operation of the Z2FET has been analyzed for 4 cases, based on the permutations of the front and back gate biases, to identify and compare different modes of operation. The memory mode of operation is under the "Thyristor" like scenario with positive and negative biases applied to the front and back gates respectively. The dynamic property of Z2FET as a memory device is shown and its operation mechanism is described.

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Section: B Z2fet Operation Based Partitionmentioning

confidence: 99%