Simulation based DC and dynamic behaviour characterization of Z2FET

Abstract

This work presents a TCAD investigation of the operation of a Z2FET device for memory application, where the TCAD model is well calibrated to experimental hysteresis curves. The DC operation of the Z2FET has been analyzed for 4 cases, based on the permutations of the front and back gate biases, to identify and compare different modes of operation. The memory mode of operation is under the "Thyristor" like scenario with positive and negative biases applied to the front and back gates respectively. The dynamic property of Z2FET as a memory device is shown and its operation mechanism is described.

3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs

“…The Z 2 -FET device [1], [2] is gaining momentum nowadays [3]. This double gated SOI (Silicon-on-Insulator) p-i-n diode is currently being extensively investigated via advanced TCAD simulations [4], [5] and through experiments [6], [7], as a possible DRAM replacement for embedded memory applications. As other single-transistor cells [8], [9], the Z 2 -FET main advantage favoring its adoption is the possibility of getting rid of the external capacitor.…”

Thorough Understanding of Retention Time of Z2FET Memory Operation

“…For memory operation, complementary potential barriers are established in the gated and intrinsic regions which prevents/allows electrons and holes to flows through the channel, depending on the electrons amounts stored under the front gate. For detailed memory operation please refer to the previously published papers [15][16][17]. Unless otherwise specified, devices with Lin=Lg=200nm are used for simulation.…”

“…A higher VA (SW1) is required to switch the device on if the initial state is '0' owing to the higher established potential barrier in Gated-SOI region. Consequently, a lower VA is needed to switch the device off [15][16]. The simulations of all specific memory operation such as program '0' (P0), program '1' (P1), hold (H), and read (R) are illustrated in Fig.…”