2019
DOI: 10.1038/s41586-019-1504-9
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Efficient molecular doping of polymeric semiconductors driven by anion exchange

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Cited by 278 publications
(321 citation statements)
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“…These anions are energetically favorable counter ions because their delocalized structure can effectively stabilize the delocalized charges on the polymer backbone. 44 Moreover, they can be much more favorable than SO increased throughout the NIR region, whereas the π-π * absorption clearly decreased based on the oscillator strength sum rule. 45 To further compare the n difference between pristine and H 2 SO 4 -treated films, we conducted Hall effect measurements.…”
Section: Resultsmentioning
confidence: 99%
“…These anions are energetically favorable counter ions because their delocalized structure can effectively stabilize the delocalized charges on the polymer backbone. 44 Moreover, they can be much more favorable than SO increased throughout the NIR region, whereas the π-π * absorption clearly decreased based on the oscillator strength sum rule. 45 To further compare the n difference between pristine and H 2 SO 4 -treated films, we conducted Hall effect measurements.…”
Section: Resultsmentioning
confidence: 99%
“…Surface doping has been recognized as an effective strategy to manipulate the electrical properties of organic thin films by means of integer charge transfer, charge‐transfer complex (CPX) formation or ion exchange. [ 17,18 ] Various treatment methods and physical mechanisms have been developed to realize enhanced conductivity and improved air stability of OSC. [ 19–21 ] Unveiling the interface orientation effect on doping can offer a new handle to fine‐tune charge transport in organic electronic devices.…”
Section: Figurementioning
confidence: 99%
“…A broad absorption band centered at ≈1500 nm appeared for face‐on films doped at low F 4 ‐TCNQ concentration (0.25 mg mL −1 ), suggesting the formation of DPP‐BTz/F 4 ‐TCNQ CPX on the basis of orbital hybridization (Figure 2a and Figure S8b, Supporting Information). [ 18,27,28 ] Interestingly, the CPX absorption peak gradually increased in intensity with increasing F 4 ‐TCNQ concentration from 0.25 to 1.5 mg mL −1 . This observation suggests that the face‐on π‐conjugated polymer backbone favorably exposes reaction sites for the dopant molecules, thus resulting in a high extent of charge transfer at the interface.…”
Section: Figurementioning
confidence: 99%
“…Carrier kinetic energy is generally dissipated at any traps in the carbon‐based conductors. Unfavorable electrostatic interaction between doped SWCNTs and counterions could spoil the intrinsic carrier transport . We believe that molecular engineering including the encapsulation described above enables the extraction of potential SWCNTs‘ transport properties.…”
Section: Figurementioning
confidence: 99%
“…Unfavorable electrostatic interaction between doped SWCNTs and counterions could spoil the intrinsic carrier transport. [13,23] We believe that molecular engineering including the encapsulation described above enables the extraction of potential SWCNTs' transport properties. Further theoretical studies are required for the full understanding of such enhanced doping.…”
mentioning
confidence: 99%