Although the efficiencies of all-perovskite tandem solar
cells
have surpassed 26%, further advancement of device performance is constrained
by the large photovoltage deficit in wide-band-gap perovskite subcells.
Meanwhile, state-of-the-art charge recombination layers incorporate
an additional thin metal film (Au or Ag), which not only complexes
device fabrication but induces parasitic optical losses. Here, we
first fabricate efficient wide-band-gap perovskite solar cells (PSCs)
with by suppressing nonradiative losses both in bulk material and
at interface. The prepared PSCs with a band gap of 1.71 eV yield an
impressive open-circuit voltage (V
OC)
of 1.27 V, giving a small V
OC deficit
of 0.44 V and an efficiency of 20.8%. We then fabricate monolithic
all-printed perovskite tandem devices by constructing a metal-free
recombination layer, which yields an efficiency of 23.65% and a high V
OC of 2.05 V. This work offers a simple yet
effective charge recombination architecture for advancing the performance
of all-perovskite tandem devices.