Efficient optical proximity correction based on virtual edge and mask pixelation with two-phase sampling

Abstract

Optical proximity correction (OPC) is a widely used resolution enhancement technique (RET) in optical lithography to improve the image fidelity and process robustness. The efficiency of OPC is very important, especially for full-chip modification with complicated circuit layout in advanced technology nodes. An efficient OPC method based on virtual edge and mask pixelation with two-phase sampling is proposed in this paper. All kinds of imaging distortions are classified into two categories of imaging anomalies, the inward shrinkage anomaly and the outward extension anomaly. The imaging anomalies are detected around the corners and along the boundaries of the mask features with several anomaly detection templates. Virtual edges are adaptively generated according to the local imaging anomalies. The virtual edges are shifted to adjust the distribution of transparent regions on the mask and modify the local imaging anomalies. Several constraints and strategies are applied for efficient modifications and global control of the contour fidelity. In addition, the diffraction-limited property of the imaging system is fully utilized to separate the imaging evaluations at a coarse sampling level and the mask modifications at a fine sampling level, through the mask pixelation with two-phase sampling. It accelerates the imaging evaluations and guarantees the modification resolution as well. Simulations and comparisons demonstrate the superior modification efficiency of the proposed method.

Multilayer defect compensation based on three dimensional absorber correction in EUV lithography

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Enhancement of pattern quality with loss modulation: Applying plasmonic lithography in sub-20 nm technology node and beyond

“…corner rounding, line-width variation, and line-length shrinking 6 . Consequently, to reduce the effect of proximity effect on image quality and enhance the resolution and image contrast of the generated aerial image of optical lithography, many kinds of resolution enhancement techniques (RETs) have been proposed, such as off-axis illumination (OAI), phase-shifting masks (PSMs), optical proximity correction (OPC), antireflective coating (ARC), double exposure methods, inverse lithography [7][8][9][10][11][12][13][14] . Essentially, the RETs aim to reduce the value of k1, which represents the ability to approach physical limits depending on the lenses, photoresist (PR), equipment and process control in the manufacturing, and the resolution enhancement.…”