Efficient passivation of solar cells by silicon nitride

Amrani, A. El; Bekhtari, A.; Kechai, A. El; Menari, H.; Mahiou, L.; Maoudj, M.

doi:10.1016/j.vacuum.2015.04.041

Cited by 15 publications

(7 citation statements)

References 7 publications

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“…Figure shows the effective minority carrier lifetime ( τ eff ) of an n‐type FZ wafer with both sides symmetrically passivated by 150 nm‐thick PSS thin film. PSS SP layer achieves an τ eff value (2.3 ms at a minority carrier density of 10 15 cm −3 ) approaching that of SiN x , suggesting that PSS thin film can function as a passivation scheme simultaneously. The passivation mechanism involves PSS/Si interface properties and is discussed in another paper .…”

Section: Resultsmentioning

confidence: 93%

Polymer Thin Films for Anti‐Reflection and Passivation on the Front Surface of Interdigitated Back Contact c‐Si Solar Cell

et al. 2017

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In this work, a polymer thin film, polystyrenesulfonate (PSS), is employed in interdigitated back contact (IBC) solar cells as an anti‐reflection (AR) coating and front surface passivation (SP) layer. It is found that PSS thin film is highly transparent and possesses a refraction index of about 1.5, and thus functions well as AR coating for Si wafer‐based solar cells. An effective minority carrier lifetime of 2.3 ms is obtained on 1–5 Ω · cm n‐type crystalline Si wafer with both sides symmetrically coated by PSS thin film, proving a good Si surface passivation by this polymer. An increase in power conversion efficiency is obtained when 150 nm‐thick PSS thin film is coated on the front surface of IBC solar cells without any AR/SP layers, resulted from the increased short circuit current density and open circuit voltage. This work opens up a new approach using organic polymer thin film deposited with low temperature and vacuum‐free technique as AR/SP multifunctional layer in Si solar cells.

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Section: Resultsmentioning

confidence: 93%

Polymer Thin Films for Anti‐Reflection and Passivation on the Front Surface of Interdigitated Back Contact c‐Si Solar Cell

et al. 2017

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“…Those nano pits can measurably reduce reflectivity and increase light absorption. During solar cell manufacture, the SiNx depositing is a very important process because it decided the passivation effect of the solar cells [26]. On one side, the nano texture can reduce the reflectivity of silicon wafer and increase the short current of solar cells.…”

Section: Methodsmentioning

confidence: 99%

Application of Nano Texturing on Multi-Crystalline Silicon Solar Cells

Gou

Wang

et al. 2018

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Nano texturing has been confirmed as an effective structure to improve the efficiency of multi-crystalline silicon solar cells by reducing optical loss. In this study, nano textured solar cells are fabricated by the Reactive Ion Etching (RIE) method based on a conventional production line. Several characterization methods are employed to evaluate the morphology, minority carrier lifetime, quantum efficiency and electricity performance of both nano textured and micro textured solar cells. The results show that nano textured solar cells have a maxiumum efficiency of 19.21 % and an average efficiency that is 0.57 % higher than that of micro textured solar cells. Thus, the RIE method is an effective way to manufacture nano textured solar cells. It can demonstrably improve the photoelectric conversion efficiency of massproduced solar cells and reduce the production cost, which is significant to the development of solar cell industry.

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“…The a-Si: H films produced at 250 °C show better electrical characteristics than the other films (Urbach energy 51 meV, deep-state defect density 2 × 10 16 cm −3 ). El Amrani et al 104 formed SiN x films in a direct plasma pulse reactor at a low frequency of 430 kHz using a combination of pure SiH 4 and pure NH 3 , annealed them for 50 s at 750 °C in an oxygen environment. For 340 μm thick HEM polycrystalline P-type silicon wafers, the process parameters were refined.…”

Section: Substrate Temperaturementioning

confidence: 99%

Review—Process Research on Intrinsic Passivation Layer for Heterojunction Solar Cells

Shi¹,

Shi²,

Ge³

et al. 2023

ECS J. Solid State Sci. Technol.

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On top of a crystalline silicon wafer, heterojunction solar cells have a thin layer of amorphous silicon (a-Si) placed on them. The efficiency of heterojunction solar cells can be increased by decreasing the electron complex loss by adding an intrinsic passivation layer to a monocrystalline silicon (c-Si) substrate. In this study, we examine the development of the intrinsic passivation layer deposition technique on c-Si substrates over the previous ten years by several research teams. First, a description of the structure, benefits, and passivation of heterojunction solar cells is given. Following that, the impact of modifying process variables on the functionality of the passivation layer and cell efficiency is explored in terms of the passivation material, hydrogen dilution ratio, substrate temperature, and post-deposition annealing. Last but not least, the ideal process parameters are summed up and potential future research areas are predicted. One of the best ways to increase the conversion efficiency of heterojunction solar cells is through surface passivation technology, and future domestic and international research will focus heavily on the process technology of its intrinsic passivation layer.

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Efficient passivation of solar cells by silicon nitride

Cited by 15 publications

References 7 publications

Polymer Thin Films for Anti‐Reflection and Passivation on the Front Surface of Interdigitated Back Contact c‐Si Solar Cell

Polymer Thin Films for Anti‐Reflection and Passivation on the Front Surface of Interdigitated Back Contact c‐Si Solar Cell

Application of Nano Texturing on Multi-Crystalline Silicon Solar Cells

Review—Process Research on Intrinsic Passivation Layer for Heterojunction Solar Cells

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