“…In the in-memory computing for emerging memory devices, there is no separation between memory and logic, to overcome Von-Neumann bottleneck and also in-memory computing devices are designed with zero-off state power and due to this, they have a distinct advantage of the non-volatile state [8]. The in-memory computing is combined with a high gate or synapse density which enables forming of cross-bar array in the device, which can be easily integrated with CMOS with high density, operating with high current and voltage consuming high dynamic power, with Inmemory computing device contains long switching time hence they operate with limited speed and have limited endurance, again the cross-bar in-memory computing is highly parallel, operate with low-power, low cost [9]. The verticals of Cross-bar inmemory computing are bio-inspired computing, deep learning, inmemory logic, chip/data security, architecture, device modeling [10].…”