Efficient red-emission InGaN/GaN multilayered structure on Si with surface-nitrified HfO2 film as buffer layer

Zhang, Wei; Zhang, Xuehua; Wang, Yongjin; Hane, Kazuhiro; Hu, Fangren

doi:10.1007/s00339-016-9746-y

Cited by 3 publications

(1 citation statement)

References 31 publications

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“…This has been in attempt to reduce the piezoelectric effect to achieve higher efficiency and/or longer wavelength emission devices. [6][7][8][9][10][11][12][13][14] A comprehensive understanding of the carrier localization in QWs of polar or semipolar orientations with various structure fluctuations is thus required.…”

Section: Introductionmentioning

confidence: 99%

First-principles calculations of carrier localization in fluctuated InGaN quantum wells

Kunikiyo

Hattori

Shirasawa

et al. 2019

Jpn. J. Appl. Phys.

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The carrier localizations in c-plane and (2021) plane InGaN/GaN quantum wells (QWs) with structure fluctuations are investigated using firstprinciples calculations. The conduction band minimum (CBM) and valence band maximum (VBM) tend to localize in the region of high indium composition about both the c-plane QW and (2021) plane QW. In the case of the (2021) plane QW, the CBM and VBM can separate from each other in the in-plane direction as well as in the perpendicular direction, when fluctuations in indium composition or well width exist. The origin of the in-plane separation is the polarization charge generated by non-uniform piezoelectric polarization due to structure fluctuation in the InGaN QWs. Our results imply that the carrier separation in the in-plane direction originating from the structure fluctuation may contribute to lowering the light emission efficiency in semi-polar plane QWs.

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Section: Introductionmentioning

confidence: 99%

First-principles calculations of carrier localization in fluctuated InGaN quantum wells

Kunikiyo

Hattori

Shirasawa

et al. 2019

Jpn. J. Appl. Phys.

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Morphological and electrical properties of RF sputtered calcium copper titanate thin films with the incorporation of intermediate layer

Tripathy

Das

Ghosh

et al. 2019

Ceramics International

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Effect of HfO₂ nitridation on structural, optical and electrical properties of GaN films grown on HfO₂/Si(100) by laser molecular beam epitaxy

Tyagi

Kumar

et al. 2018

Mater. Res. Express

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Efficient red-emission InGaN/GaN multilayered structure on Si with surface-nitrified HfO2 film as buffer layer

Cited by 3 publications

References 31 publications

First-principles calculations of carrier localization in fluctuated InGaN quantum wells

First-principles calculations of carrier localization in fluctuated InGaN quantum wells

Morphological and electrical properties of RF sputtered calcium copper titanate thin films with the incorporation of intermediate layer

Effect of HfO₂ nitridation on structural, optical and electrical properties of GaN films grown on HfO₂/Si(100) by laser molecular beam epitaxy

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Efficient red-emission InGaN/GaN multilayered structure on Si with surface-nitrified HfO2 film as buffer layer

Cited by 3 publications

References 31 publications

First-principles calculations of carrier localization in fluctuated InGaN quantum wells

First-principles calculations of carrier localization in fluctuated InGaN quantum wells

Morphological and electrical properties of RF sputtered calcium copper titanate thin films with the incorporation of intermediate layer

Effect of HfO2 nitridation on structural, optical and electrical properties of GaN films grown on HfO2/Si(100) by laser molecular beam epitaxy

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Effect of HfO₂ nitridation on structural, optical and electrical properties of GaN films grown on HfO₂/Si(100) by laser molecular beam epitaxy