Efficient small-signal extraction technique for ultra-thin body and ultra-thin box FD-SOI transistor

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

“…To get the extrinsic resistance values at high frequencies, we use a linear regression technique on parametric curves defined by the real part of the transistor Z‐matrix 11,17 . The extrinsic series resistances R s , R g and R d can be represented using the parametric curves of the real part of Z ‐parameters defined in a 2D plane as follows: …”

“…Once the value of the branch capacitance C dso is known, we can determine those of C dsi and C dse from (11). The proposed technique was applied on a 4 Â 50 μm GaN SiC HEMT and a 2 Â 50 μm gate width GaN Si HEMT.…”

“…Thence, modeling and characterization of GaN HEMT devices at high frequency have attracted much attention from many researchers to provide accurate models to circuit designers 1–5 . However, each model requires precise extraction of its small‐signal equivalent circuit model (EC‐SSM) parameters 6–12 . This unavoidable step typically starts with an accurate determination of the extrinsic parameters of the EC‐SSM to assess the overall performance of such models.…”

“…[1][2][3][4][5] However, each model requires precise extraction of its small-signal equivalent circuit model (EC-SSM) parameters. [6][7][8][9][10][11][12] This unavoidable step typically starts with an accurate determination of the extrinsic parameters of the EC-SSM to assess the overall performance of such models. In turn, a reliable extraction of their parasitic capacitances is crucial.…”