“…It is conceived that these methods are apt for nanofabrication of devices. The significant advantages of heterogeneous integration, modular design, reduced die size, power, cost and logic redundancy in M3D IC provides an attractive path towards many market segments such as logic (3D CMOS, 3D FPGA, 3D Gate Array), [13][14][15] memory (3D DRAM, 3D RRAM, 3D Flash), 16,17 optoelectronics, 18,19 deep neural networks 20,21 and hardware security. 22,23 The typical TSV based 3D ICs incorporate parallel integration in which the wafers are processed separately and then connected.…”