Efficient time integration of the Boltzmann-Poisson system applied to semiconductor device simulation

Abstract

This paper presents new efficient methods for performing the time integration of finite-difference WENO approximations of the Boltzmann-Poisson system applied to semiconductor device simulation. The developed methods are based on local time-step schemes for hyperbolic conservation laws which permit the use of different time increments at different positions in space. A strategy to dynamically adapt the space-time grid according to the actual stability criteria imposed by the CFL-condition is proposed. The resulting numerical schemes are used to simulate the electron transport in a n + −n −n + silicon diode and in a silicon MESFET. Several numerical tests and comparisons with computations performed with TVD Runge-Kutta type algorithms prove the efficiency of the presented time integration methods.

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

“…In addition, the so-called energy transport model (ETM) and mo ment methods [27], which are somet imes called the hydrodynamic model (HDM), have been also used to solve the BT E in the hot carrier regime. In the ETM approach the distribution function is decomposed into an even and odd parts and the collision term is expressed using a microscopic relaxation time appro ximat ion [28].…”