This study investigates the optimization of organic photodetectors (OPDs) using SCAPS-1D simulation, focusing on the effects of layer thickness, doping density, temperature, external quantum efficiency (EQE), and responsivity on key performance metrics. The device structure includes PBDB-T/ITIC as the active layer and graphene oxide (GO) as the hole transport layer (HTL). By systematically varying the thickness of the PBDB-T/ITIC active layer and the GO hole transport layer, as well as adjusting the donor and acceptor densities, we analyze their impact on open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), power conversion efficiency (η), EQE, and responsivity. The simulation results reveal that an optimal active layer thickness of 800 nm for PBDB-T/ITIC and a GO layer thickness of 50 nm maximize device performance. Additionally, a donor density of \({9\times 10}^{19}{cm}^{-3}\) for PFN and an acceptor density of \({10}^{20}{cm}^{-3}\) for GO significantly enhance efficiency. The photodetector demonstrates a high current under illumination, peaking responsivity around 920 nm, and excellent performance in the visible spectrum. Temperature variations show optimal performance around 330 K. These findings highlight the critical role of precise material and structural optimization in achieving high-efficiency OPDs, providing valuable insights for future research and development in this field.