Efficient UV-Sensitive Si-In-ZnO-Based Photo-TFT and Its Behavior as an Optically Stimulated Artificial Synapse

Sarkar, Anish; Lee, Sang Yeol

doi:10.1021/acsaelm.2c01559

Cited by 10 publications

(1 citation statement)

References 35 publications

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“…When an optical input is applied to the AOS channel, photo-generated electrons are generated through the ionization of oxygen vacancies within the subgap region, resulting in increased channel conductance. After the optical input is eliminated, the photo-generated electrons never rapidly dissipate through the process of recombination [28][29][30]. Importantly, the PPC effects of AOSs allow the conductance to be maintained over time, enabling the realization of biological plasticity, such as long-term potentiation, in optoelectronic synaptic devices [31,32].…”

Section: Introductionmentioning

confidence: 99%

Light-Stimulated IGZO Transistors with Tunable Synaptic Plasticity Based on Casein Electrolyte Electric Double Layer for Neuromorphic Systems

Kim,

Park,

Cho

2023

Biomimetics

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In this study, optoelectronic synaptic transistors based on indium–gallium–zinc oxide (IGZO) with a casein electrolyte-based electric double layer (EDL) were examined. The casein electrolyte played a crucial role in modulating synaptic plasticity through an internal proton-induced EDL effect. Thus, important synaptic behaviors, such as excitatory post-synaptic current, paired-pulse facilitation, and spike rate-dependent and spike number-dependent plasticity, were successfully implemented by utilizing the persistent photoconductivity effect of the IGZO channel stimulated by light. The synergy between the light stimulation and the EDL effect allowed the effective modulation of synaptic plasticity, enabling the control of memory levels, including the conversion of short-term memory to long-term memory. Furthermore, a Modified National Institute of Standards and Technology digit recognition simulation was performed using a three-layer artificial neural network model, achieving a high recognition rate of 90.5%. These results demonstrated a high application potential of the proposed optoelectronic synaptic transistors in neuromorphic visual systems.

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Section: Introductionmentioning

confidence: 99%

Light-Stimulated IGZO Transistors with Tunable Synaptic Plasticity Based on Casein Electrolyte Electric Double Layer for Neuromorphic Systems

Kim,

Park,

Cho

2023

Biomimetics

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Oxide Based Pentachromatic‐Vision Inspired Optoelectronic Synaptic Transistor with Large Conduction States Over 512

Jeong,

Ma,

Park

et al. 2024

Adv Funct Materials

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Optoelectronic neuromorphic devices based on oxide semiconductors have been potentially investigated to mimic the functions of human visual synapses. However, the challenge comes from the wide bandgap characteristics of numerous oxide semiconductors, which restricts the response range of the device under ultra‐violet (UV) region. Strategies for widening the response range are mostly focused on artificially generating the defect states, however, most of them results in mimicking the tetrachromatic visual system from UV to visible light range. To be used for industries such as robotics, or autonomous vehicles, mimicking the tetrachromatic vision system should be overcome up to near‐infrared (NIR) region. Here, a facile solution processed indium‐gallium‐zinc‐oxide and silver oxide structured optoelectronic synaptic transistor is fabricated not only to mimic the function of human synapses, but to overcome the tetrachromatic human visual system up to the NIR region. The device not only showed photoresponse characteristics under the entire 405 to 830 nm wavelength region, but also showed significant synaptic behaviors with over 512 conduction states under a reasonable incident light power density of 4.5 mW cm−2. The results will offer a useful facile method for fabricating optoelectronic synaptic transistors that can overcome the tetrachromatic vision systems.

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Amorphous In–Al–Sn–O Thin Film Transistors and Their Application in Optoelectronic Artificial Synapses

Feng,

Zhang,

Zhuang

et al. 2024

Adv Elect Materials

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In‐Al‐Sn‐O (IATO) is a very promising novel amorphous oxide as the active layer of thin film transistors (TFTs). Herein, IATO TFTs are first fabricated with the effects of annealing on IATO films and TFTs being studied. The IATO films possessed amorphous structure, flat surface morphology, high visible light transmittance, and wide optical bandgap ≈4.20 eV before and after annealing even at 400 °C. The minimal surface roughness and internal defects are obtained for the 300 °C annealed IATO film. Correspondingly, the 300 °C annealed TFTs demonstrated the best overall performance including high saturation mobility (8.55 ± 0.62 cm2 V−1 s−1), low subthreshold swing (0.40 ± 0.07 V dec−1), ideal on/off current ratio (1.25 ± 0.09 × 108), and negligible hysteresis (0.23 ± 0.03 V) values. The 300 °C annealed TFTs are then applied in optoelectronic artificial synapses and exhibit typical synaptic properties, including excitatory postsynaptic current, paired‐pulse facilitation, and short‐term plasticity to long‐term plasticity conversion in response to light stimulation. The international Morse code and repetitive learning‐forgetting behavior of the human brain are also successfully simulated. In particular, an emotion‐memory efficiency model is proposed and the emotion effect on human memory efficiency is successfully imitated via the regulation of gate voltage.

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Efficient UV-Sensitive Si-In-ZnO-Based Photo-TFT and Its Behavior as an Optically Stimulated Artificial Synapse

Cited by 10 publications

References 35 publications

Light-Stimulated IGZO Transistors with Tunable Synaptic Plasticity Based on Casein Electrolyte Electric Double Layer for Neuromorphic Systems

Light-Stimulated IGZO Transistors with Tunable Synaptic Plasticity Based on Casein Electrolyte Electric Double Layer for Neuromorphic Systems

Oxide Based Pentachromatic‐Vision Inspired Optoelectronic Synaptic Transistor with Large Conduction States Over 512

Amorphous In–Al–Sn–O Thin Film Transistors and Their Application in Optoelectronic Artificial Synapses

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