Artificial synapses, such as ferroelectric field‐effect transistors, aspire the brain‐like computation in real life and are likely to replace conventional computing methods in the future. Amorphous SiZnSnO (a‐SZTO)‐based ferroelectric field‐effect transistor is fabricated using the organic poly(vinylidene fluoride‐trifluoroethylene) P(VDF‐TrFE) ferroelectric gate insulating layer. First, the ferroelectric properties of P(VDF‐TrFE) are analyzed depending on the crystallization temperature for artificial synaptic transistor applications. The ferroelectricity becomes prominent with the evolution of the β‐phase till 140 °C and degrades thereafter. The a‐SZTO‐based ferroelectric field‐effect transistors employing P(VDF‐TrFE) show anticlockwise hysteresis, typical for a ferroelectric field‐effect transistor. The nonlinearity for the potentiation and depression and the dynamic range is confirmed to be increased with higher β‐phase concentration. The rise in the concentration is related to the elevated thermodynamic stability of the β‐phase between curie temperature and the melting point. Utilizing the parameters obtained from the a‐SZTO‐P(VDF‐TrFE) synaptic transistor, the simulation studies exhibit a high recognition rate of 86.8%, which makes it a promising candidate for artificial intelligence applications.

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Integration of optoelectronic synaptic devices as neuromorphic vision sensors has currently attracted significant attention due to their ability of imitating human visual systems. Low-power-consuming UV-sensitive phototransistors fabricated using amorphous oxide semiconductors are one of the potential contenders for the development of optically stimulated synaptic devices. Herein, amorphous Si-In-ZnO (a-SIZO)-based UV-sensitive photo thin-film transistors (photo-TFTs) were fabricated, which exhibited an efficient spectral photoresponsivity of 4.93 × 103 A/W and detectivity of 5.47 × 1015 jones at 350 nm wavelength. Considerable photoresponse in the visible range (450–650 nm) was also observed. The presence of persistent photoconductivity (PPC) in the photoresponse characteristics enabled the photo-TFT to perform simultaneously as an optically stimulated artificial synapse. The typical synaptic behaviors such as excitatory post-synaptic current (EPSC), pair-pulse facilitation (PPF), short-term plasticity (STP) to long-term plasticity (LTP), etc. were demonstrated efficiently by the fabricated photo-TFT, indicating its learning and memorizing capabilities similar to a biological synapse. The concurrent demonstration of efficient UV range photoresponse and optically stimulated synaptic behavior enables the a-SIZO-based photo-TFT as a promising pathway toward the development of artificial visual sensors which can be integrated into future neuromorphic systems.

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