2022
DOI: 10.1016/j.mtcomm.2022.104809
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Structural and electronic properties with respect to Si doping in oxygen rich ZnSnO amorphous oxide semiconductor

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Cited by 4 publications
(1 citation statement)
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“…It is known that these problems can be solved by doping appropriate cations as suppressors of oxygen vacancy. The principle is to control the oxygen vacancy-related trap states by introducing an element that has higher binding energy with oxygen [14]. In recent years, several doping elements, including Zr [6], Ba [2], P [15], and Sb [16], have been reported to improve the stability of devices by suppressing oxygen vacancy.…”
Section: Introductionmentioning
confidence: 99%
“…It is known that these problems can be solved by doping appropriate cations as suppressors of oxygen vacancy. The principle is to control the oxygen vacancy-related trap states by introducing an element that has higher binding energy with oxygen [14]. In recent years, several doping elements, including Zr [6], Ba [2], P [15], and Sb [16], have been reported to improve the stability of devices by suppressing oxygen vacancy.…”
Section: Introductionmentioning
confidence: 99%