2016
DOI: 10.1039/c6ra05339d
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Efficient visible light photocatalysis and tunable photoluminescence from orientation controlled mesoporous Si nanowires

Abstract: Efficient visible light photocatalysis and visible photoluminescence from orientation controlled mesoporous Si nanowires grown by Ag assisted chemical etching of Si have been discussed.

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Cited by 14 publications
(17 citation statements)
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“…In our experiments, one-dimensional zigzag SiNWs were obtained on Si (111) substrate, in agreement with existing reports (Fig. 2 b) [ 7 , 19 ]. Compared with the SiNWs prepared on Si (111), the majority of the nanowire morphologies on Si (110) wafers are more uniform.…”
Section: Resultssupporting
confidence: 92%
See 1 more Smart Citation
“…In our experiments, one-dimensional zigzag SiNWs were obtained on Si (111) substrate, in agreement with existing reports (Fig. 2 b) [ 7 , 19 ]. Compared with the SiNWs prepared on Si (111), the majority of the nanowire morphologies on Si (110) wafers are more uniform.…”
Section: Resultssupporting
confidence: 92%
“…Superwetting surface with drop sliding angle (α) less than 5° and water contact angles (CA) lower than 5° or higher than 150° has drawn much more attention in recent years because of the limited contact angle and rollability [ 1 , 2 ]. The superwetting properties of solid surface has crucial applications in our daily life as well as engineering fields, such as self-cleaning, digital microfluidic devices, biomedical engineering, and silicon hybrid solar cells [ 3 7 ]. There are two ways to obtain the superwetting properties of existing artificial surface.…”
Section: Introductionmentioning
confidence: 99%
“…If the oxidant concentration remains constant during etching, we expect the etch depth to increase linearly in time, an observation that has been confirmed experimentally (Ghosh and Giri, 2016; Toor et al, 2016a). If we assume Arrhenius behavior and that the kinetic order is independent of temperature, the etch rate is given by the depth along the etch direction divided by time, and a plot of the etch rate vs. inverse temperature should yield a straight line as long as the concentration of the oxidant is essentially invariant during the etch (as it is for wafer etching, but not necessarily for high-surface area powder etching).…”
Section: Resultsmentioning
confidence: 59%
“…Pei et al (2017) found that [111]-oriented nanowires are observed for 20 mM H 2 O 2 but [001]-oriented SiNWs are formed at 400 mM H 2 O 2 . Ghosh and Giri (2016) similarly reported that the etch direction changed from the vertical 〈111〉 direction to slanted and eventually to wavy as H 2 O 2 concentration is increased.…”
Section: Introductionmentioning
confidence: 99%
“…A Gaussian peak yields 1.9 eV for the energy of the peak and a full-width half max (FWHM) of 0.3 eV, which is consistent with the literature 29,40,41 . Prior studies suggest that the origin of this red band is associated with the porous Si/SiO x layer, where the local electrochemical etching creates Si nanocrystals (< 10 nm in size) 29,[42][43][44] as well as active defect sites, such as non-bridging oxygen hole centers (NBOHC, ≡Si-O•). The emission peak for NBOHC is centered around 1.9 eV 41,42 , whereas the luminescence of Si nanocrystals is in the range of ultraviolet (3.5 eV) to infrared (1.5 eV), depending on the cross-sectional area of the Si nanocrystals 45 .…”
Section: Resultsmentioning
confidence: 99%