2011
DOI: 10.1364/ol.36.002916
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Eigenmode analysis of phased-coupled VCSEL arrays using spatial coherence measurements

Abstract: We apply the modal coherence theory to evaluate the spatial mode structure of a 2×2 phase-coupled array of vertical cavity surface emitting lasers (VCSELs). The eigenmode structure is extracted for different pump currents by measuring the degree of spatial coherence of all VCSEL pairs in the array. The results reveal the impact of optical disorder and spatial hole burning on the modal discrimination. The approach is useful more generally for the evaluation of spatial mode content of other laser array.

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Cited by 4 publications
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“…For this demonstrated array structure, there is evidence of coherence as a superstructure in the FFPs with pitch sizes of ≈12 μm or below. [ 21,22 ] In addition, although the mesa shape is not symmetrically circular, a nearly circular (diamond‐shaped) wet oxidation aperture can still be obtained, as shown in the inset to Figure 1c. The VCSEL epilayer structure is grown on a n + GaAs substrate, which is composed of four In 0.07 Ga 0.9 As/Al 0.3 Ga 0.7 As (40/45 Å) MQWs sandwiched between 39‐paired n‐type and 24‐paired p‐type Al 0.93 Ga 0.07 As/Al 0.15 Ga 0.85 As DBR layers with an Al 0.98 Ga 0.02 As layer (25 nm thick) above the MQWs for oxidation.…”
Section: Device Structure and Fabricationmentioning
confidence: 99%
“…For this demonstrated array structure, there is evidence of coherence as a superstructure in the FFPs with pitch sizes of ≈12 μm or below. [ 21,22 ] In addition, although the mesa shape is not symmetrically circular, a nearly circular (diamond‐shaped) wet oxidation aperture can still be obtained, as shown in the inset to Figure 1c. The VCSEL epilayer structure is grown on a n + GaAs substrate, which is composed of four In 0.07 Ga 0.9 As/Al 0.3 Ga 0.7 As (40/45 Å) MQWs sandwiched between 39‐paired n‐type and 24‐paired p‐type Al 0.93 Ga 0.07 As/Al 0.15 Ga 0.85 As DBR layers with an Al 0.98 Ga 0.02 As layer (25 nm thick) above the MQWs for oxidation.…”
Section: Device Structure and Fabricationmentioning
confidence: 99%