Einfluß der Realstruktur auf einige Eigenschaften von Supraleitern

Paufler, P.

doi:10.1002/crat.19740090511

Cited by 5 publications

(1 citation statement)

References 39 publications

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“…Even a relative rnicroprobe measurement to arrange the samples with different Si contents yields +0. 4 Si as a limiting difference between two samples. The experiments to increase the exactness of the microprobe measurements are continued.…”

Section: Methodsmentioning

confidence: 99%

Influence of chemical composition within the range of homogeneity on phase transition and transition temperature of V3Si single crystals. I. Preparation and characterization of single crystals

Jurisch¹,

Berthel²,

Ullrich³

1977

Phys. Stat. Sol. (a)

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Very pure V3Si single crystals of definite orientation are prepared using a zone melt technique with electron beam heating. For the determination of concentration and the detection of inhomogeneities of composition along the crystals the measurement of the resistivity ratio r=R20K/R293K is the most exact method (ΔC ≦ 0.05 at% Si). The necessary connection between r and r and the composition C is deduced from the measured relation between r and a (a = precision lattice constant by means of Kossel technique) and from the connection between a and C approximately known from literature. After optimization of the technology of preparation strictly single‐phase single crystals are produced, the composition of which does not vary noticably over a length of 20 mm.

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Section: Methodsmentioning

confidence: 99%

Influence of chemical composition within the range of homogeneity on phase transition and transition temperature of V3Si single crystals. I. Preparation and characterization of single crystals

Jurisch¹,

Berthel²,

Ullrich³

1977

Phys. Stat. Sol. (a)

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Dislocation etching in V₃Si

Gohar

Kleinstück

Krämer

et al. 1980

Cryst Res and Technol

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Dislocations in as-grown and in plastically deformed V,Si single crystals have been studied by chemical etching. I n as-grown crystals dislocations are partly arranged in small-angle boundaries parallel to { 001 }, { 01 1 }, and { 11 2 ) planes. The total dislocation density amounted to (105 -106)After plastic deformation a t elevated temperatures indications for slip and climb processes were observed. The dislocation density increased to lo7 em-2.Die Anordnung von Versetzungen wurde in unverformten und verformten V,Si-Einkristallen mit der Atzmet,hode untersucht. I n unverformten Kristallen treten Kleinwinkelkorngrenzen parallel zu { 001 } -, { 01 1 } -und { 11 2 ) -Ebenen auf. Die Gesamtversetzungsdichte betragt (105 -lo6) Nach plastischer Verformung bei hohen Temperaturen wurden Anzeichen fur Gleit-und Kletterprozesse beobachtet. Die Versetzungsdichte stieg auf 107 em-2.

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Influence of the real structure on the linear thermal expansion coefficient of A15‐type intermetallic compounds from room temperature to 10K

Hérold

Försterling

Kleinstück

1981

Cryst Res and Technol

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The temperature dependence of the thermal expansion coefficient of a number of A15-compounds was investigated by X-ray diffraction experiments. The expansion coefficient of the high-temperature superconductors with the A15-structure is highly temperature dependent and has negative values below 100 K. Deviations from the stoichiometric composition, substitution of foreign atoms and lattice distortions prevent negative values of the expansion coefficient. The results are discussed in connection with other physical properties of these compounds.

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Einfluß der Realstruktur auf einige Eigenschaften von Supraleitern

Cited by 5 publications

References 39 publications

Influence of chemical composition within the range of homogeneity on phase transition and transition temperature of V3Si single crystals. I. Preparation and characterization of single crystals

Influence of chemical composition within the range of homogeneity on phase transition and transition temperature of V3Si single crystals. I. Preparation and characterization of single crystals

Dislocation etching in V₃Si

Influence of the real structure on the linear thermal expansion coefficient of A15‐type intermetallic compounds from room temperature to 10K

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Einfluß der Realstruktur auf einige Eigenschaften von Supraleitern

Cited by 5 publications

References 39 publications

Influence of chemical composition within the range of homogeneity on phase transition and transition temperature of V3Si single crystals. I. Preparation and characterization of single crystals

Influence of chemical composition within the range of homogeneity on phase transition and transition temperature of V3Si single crystals. I. Preparation and characterization of single crystals

Dislocation etching in V3Si

Influence of the real structure on the linear thermal expansion coefficient of A15‐type intermetallic compounds from room temperature to 10K

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Product

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Dislocation etching in V₃Si