Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

Abstract

One possible way to create nanosized structures on the basis of the formation of molecules (S ++ Mn --) and (Se ++ Mn --) among impurity atoms S, Se, Mn in the silicon lattice is described in the work. Relationships between the concentration of molecules (S ++ Mn --) and (Se ++ Mn --) and the concentration of impurity atoms are established.