Elastic anharmonicity of InP: Its relationship to the high pressure transition

Nichols, David M.; Rimai, D. S.; Sladek, R. J.

doi:10.1016/0038-1098(80)90205-7

Cited by 101 publications

(25 citation statements)

References 11 publications

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“…1 The indentation test results on the (100) plane yielded a Young's modulus of 95.37 GPa and confirmed, within the measurement uncertainty, the literature value. 34 This value was used for all calculations, together with a Poisson's ratio of m 5 0.36. 35 It is well recognized that the glide planes are {111} and the glide directions are ,110. leading to a 2-fold symmetry, the so-called rosette arm patterns.…”

Section: Methodsmentioning

confidence: 99%

Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

et al. 2011

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Nanoindentation and nanoscratching of an indium phosphide (InP) semiconductor surface was investigated via contact mechanics. Plastic deformation in InP is known to be caused by the nucleation, propagation, and multiplication of dislocations. Using selective electrochemical dissolution, which reveals dislocations at the semiconductor surface, the load needed to create the first dislocations in indentation and scratching can be determined. The experimental results showed that the load threshold to generate the first dislocations is twice lower in scratching compared to indentation. By modeling the elastic stress fields using contact mechanics based on Hertz's theory, the results during scratching can be related to the friction between the surface and the tip. Moreover, Hertz's model suggests that dislocations nucleate firstly at the surface and then propagate inside the bulk. The dislocation nucleation process explains the pop-in event which is characterized by a sudden extension of the indenter inside the surface during loading.

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Section: Methodsmentioning

confidence: 99%

Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

et al. 2011

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“…From the available data [4,5] of seond and third order elastic constants, (γji ) 2 and (γji 2 ) have been evaluated for different directions of propagation. The corresponding values of non-linearity parameter is also obtained.…”

Section: Discussionmentioning

confidence: 99%

Acoustical Dissipation in Some Tetrahedrally-Bonded Semiconducting Compounds

Kor

Mehrotra

1995

Acta Phys. Pol. A

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Phonon-phonon coupling and thermoelastic relaxation are the principal thermal causes of ultrasonic attenuation in solids at room temperature. Second order elastic moduli and third order elastic moduli have been used to study the ultrasonic attenuation suffered by compressional and shear acoustic waves for some tetrahedrally bonded semiconducting materials, viz. GaP, InP and InAs along (100), (110) and (111) crystallographic directions. Attenuation in case of InP is found to be quite large as compared to GaP and InAs. The reason behind this discrepancy is due to doping of Cr in InP sample and it is also seen that ultrasonic attenuation due to phonon-phonon interaction dominates over that due to thermoelastic relaxation.

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“…The Ritz-Rayleigh based calculations were performed with the maximal degree of the Legendre polynomials used in the discretization (7) equal to 40, the depth of the computation domain d ¼ 10, the elastic constants of InP c 11 ¼ 101:1 GPa, c 12 ¼ 56:1 GPa and c 44 ¼ 45:6 GPa from [19], the mass density q = 4.81 g cm À3 and for the crystallographic orientations of the free surfaces and the first (starting) measured direction taken from the Laue method. The dimension of the square matrix in the eigenvalue problem (11) was 239.…”

Section: Methodsmentioning

confidence: 99%