Elastic, electronic and optical properties of the two-dimensional PtX2 (X = S, Se, and Te) monolayer

Du, Juan; Song, Peng; Fang, Liang; Wang, Tianxing; Wei, Zhongming; Li, Jingbo; Xia, Congxin

doi:10.1016/j.apsusc.2017.11.106

Cited by 103 publications

(50 citation statements)

References 31 publications

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“…The ARPES measurements show that unlike its isostructural PtSe2 films that show metal-semiconductor transition with decreasing film thickness [4,13], PtTe2 films, however, remain metallic even down to 2 ML. First principle calculations show that 1 ML PtTe2 is semiconductor [25][26][27], which still awaits further experimental verification.…”

Section: Resultsmentioning

confidence: 98%

Crossover from 2D metal to 3D Dirac semimetal in metallic PtTe2 films with local Rashba effect

Deng

Yan

et al. 2019

Science Bulletin

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PtTe 2 and PtSe 2 with trigonal structure have attracted extensive research interests since the discovery of type-II Dirac fermions in the bulk crystals. The evolution of the electronic structure from bulk 3D topological semimetal to 2D atomic thin films is an important scientific question. While a transition from 3D type-II Dirac semimetal in the bulk to 2D semiconductor in monolayer (ML) film has been reported for PtSe 2 , so far the evolution of electronic structure of atomically thin PtTe 2 films still remains unexplored. Here we report a systematic angleresolved photoemission spectroscopy (ARPES) study of the electronic structure of high quality PtTe 2 films grown by molecular beam epitaxy with thickness from 2 ML to 6 ML. ARPES measurements show that PtTe 2 films still remain metallic even down to 2 ML thickness, which is in sharp contrast to the semiconducting property of few layer PtSe 2 film. Moreover, a transition from 2D metal to 3D type-II Dirac semimetal occurs at film thickness of 4-6 ML. In addition, Spin-ARPES measurements reveal helical spin textures induced by local Rashba effect in the bulk PtTe 2 crystal, suggesting that similar hidden spin is also expected in few monolayer PtTe 2 films. Our work reveals the transition from 2D metal to 3D topological semimetal and provides new opportunities for investigating metallic 2D films with local Rashba effect.

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Section: Resultsmentioning

confidence: 98%

Crossover from 2D metal to 3D Dirac semimetal in metallic PtTe2 films with local Rashba effect

Deng

Yan

et al. 2019

Science Bulletin

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“…Besides, a reversible SMT is induced for bilayer PtSe 2 under critical vertical strain (0.4 < ε ≦ 0.45, 1.2 GPa < P ≦ 3.6 GPa), due to the p‐orbital coupling between the inner Se atoms of the two layers . Xia and co‐workers also confirmed that the SMT could be realized when the −3% compressive strain is applied on monolayer PtX 2 (X = S, Se, and Te) . Stress is also considered to drive topological phase transitions and understand the nature of topological states in PtTe 2 and PdTe 2 .…”

Section: Structure Of 2d Ntmdsmentioning

confidence: 92%

Recent Progress on 2D Noble‐Transition‐Metal Dichalcogenides

Liu

et al. 2019

Adv Funct Materials

233

166

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Emerging classes of 2D noble-transition-metal dichalcogenides (NTMDs) stand out for their unique structure and novel physical properties in recent years. With the nearly full occupation of the d orbitals, 2D NTMDs are expected to be more attractive due to the unique interlayer vibrational behaviors and largely tunable electronic structures compared to most transition metal dichalcogenide semiconductors. The novel properties of 2D NTMDs have stimulated various applications in electronics, optoelectronics, catalysis, and sensors. Here, the latest development of 2D NTMDs are reviewed from the perspective of structure characterization, preparation, and application. Based on the recent research, the conclusions and outlook for these rising 2D NTMDs are presented.Very recently, group-10 noble TMDs (NTMDs) have been reintroduced as new 2D materials, displaying many fascinating properties including widely tunable bandgap, moderate carrier mobility, anisotropy, and ultrahigh air stability. [34][35][36][37] Unlike most common TMDs with less d-electrons, the d orbitals of NTMDs are nearly fully occupied, and the corresponding p z orbital of interlayer chalcogen atoms are highly hybridized, leading to strong layer-dependent properties and interlayer interactions. [36,38] For example, it has been predicted that PtS 2 holds a layerdependent bandgap from 0.25 to 1.6 eV, [36] bridging the gap between graphene and most TMDs that with large gap. Besides, the calculated mobility based on PtS 2 , PtSe 2 , and PdSe 2 field effect transistors (FETs) is as high as ≈200 cm 2 V −1 s −1 , [36,37,39] larger than most other TMDs. Moreover, NTMDs possess high air stability, and the performance of the PtSe 2 FET remains nearly unchanged after 5 months air exposure. [37] Specially, PdS 2 and PdSe 2 hold novel puckered pentagonal structure and thus exhibit very interesting anisotropic properties, [39,40] which may bring even more physics and applications. Additionally, PtTe 2 and PdTe 2 are type-II Dirac fermions, making them great platform for investigating novel transport related to topological phase transition and chiral anomaly. [41,42] Nowadays, the 2D NTMDs is becoming increasingly fascinating in the 2D materials research.In this review, we highlight a comprehensive report of the recent research progress in 2D NTMDs such as PtS 2 , PtSe 2 , PdS 2 , PdSe 2 , PtTe 2 , and PdTe 2 . In order to understand the internal relation between structural characteristics and physical properties, this review begins with a brief summary of the structure of 2D NTMDs and their transitions. Then, some recent progress on their preparation methods, including mechanical exfoliation of the bulk materials, chemical vapor deposition (CVD), molecular beam epitaxy (MBE), is reviewed along with the performance of the resulting 2D NTMDs as high-performance candidate for field effect transistors, photodetectors, catalysis, and sensors. Finally, this review is concluded with the existing challenges and a future perspective for these rising 2D NTMDs. Structure of 2D NTM...

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“…The large response of the electronic properties of PtSe 2 to strain can be exploited for optical and mechanical sensors . Du et al . showed that a compressive strain of 3 % induces a semiconductor‐to‐semimetal transition in a monolayer PtSe 2 , which is easier to achieve than in MoS 2 because of the low in‐plane stiffness of 64 N m −1 .…”

Section: Properties and Applicationsmentioning

confidence: 99%

Two‐Dimensional Noble‐Metal Chalcogenides and Phosphochalcogenides

2020

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Noble‐metal chalcogenides, dichalcogenides, and phosphochalcogenides are an emerging class of two‐dimensional materials. Quantum confinement (number of layers) and defect engineering enables their properties to be tuned over a broad range, including metal‐to‐semiconductor transitions, magnetic ordering, and topological surface states. They possess various polytypes, often of similar formation energy, which can be accessed by selective synthesis approaches. They excel in mechanical, optical, and chemical sensing applications, and feature long‐term air and moisture stability. In this Minireview, we summarize the recent progress in the field of noble‐metal chalcogenides and phosphochalcogenides and highlight the structural complexity and its impact on applications.

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Elastic, electronic and optical properties of the two-dimensional PtX2 (X = S, Se, and Te) monolayer

Cited by 103 publications

References 31 publications

Crossover from 2D metal to 3D Dirac semimetal in metallic PtTe2 films with local Rashba effect

Crossover from 2D metal to 3D Dirac semimetal in metallic PtTe2 films with local Rashba effect

Recent Progress on 2D Noble‐Transition‐Metal Dichalcogenides

Two‐Dimensional Noble‐Metal Chalcogenides and Phosphochalcogenides

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