Microscopy of Semiconducting Materials 2001 2018
DOI: 10.1201/9781351074629-114
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Elastic mapping of sub-surface defects by ultrasonic force microscopy: limits of depth sensitivity

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“…In [20], a GaAs grating buried under a polymeric layer is clearly imaged using Scanning Local Acceleration Microscopy. Changes in contact stiffness of cavities in Si within about 200 nm from the Si(100) surfaces have been detected using UFM [53]. In [30], Au particles with a diameter of 15-20 nm buried under a 500-nm polymeric film have been observed using Scanning Near-Field Ultrasound Holography.…”
Section: Ufm Imagesmentioning
confidence: 99%
“…In [20], a GaAs grating buried under a polymeric layer is clearly imaged using Scanning Local Acceleration Microscopy. Changes in contact stiffness of cavities in Si within about 200 nm from the Si(100) surfaces have been detected using UFM [53]. In [30], Au particles with a diameter of 15-20 nm buried under a 500-nm polymeric film have been observed using Scanning Near-Field Ultrasound Holography.…”
Section: Ufm Imagesmentioning
confidence: 99%