1988
DOI: 10.1063/1.339892
|View full text |Cite
|
Sign up to set email alerts
|

Elastic properties of epitaxial ZnSe(001) films on GaAs measured by Brillouin spectroscopy

Abstract: Brillouin scattering experiments have been performed on a series of epitaxially grown ZnSe (001) films on GaAs (001) of thicknesses between 0.23 and 2.0 μm. No thickness-dependent modifications of the elastic constants have been found. The obtained room-temperature values of C11=87.0, C12=54.7, and C44=39.1 GPa are in good agreement with literature values of ZnSe bulk material. The calculation of the theoretical cross sections shows a good agreement with the experimental data.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
7
0

Year Published

1990
1990
2018
2018

Publication Types

Select...
5
4

Relationship

0
9

Authors

Journals

citations
Cited by 46 publications
(7 citation statements)
references
References 8 publications
0
7
0
Order By: Relevance
“…We notice that the BLW and BSW peaks are broadened because the interaction volume is limited by the finite thickness of the films. 36,37 Due to refraction at the air/film interface, the bulk waves associated with the BLW and BSW peaks have a wave vector at angle …”
Section: Bls Experimentsmentioning
confidence: 99%
“…We notice that the BLW and BSW peaks are broadened because the interaction volume is limited by the finite thickness of the films. 36,37 Due to refraction at the air/film interface, the bulk waves associated with the BLW and BSW peaks have a wave vector at angle …”
Section: Bls Experimentsmentioning
confidence: 99%
“…In the case of a hexagonal elastic symmetry, four of the five effective elastic constants, namely C 11 , C 13 , C 33 and C 44 , influence the Rayleigh-Sezawa modes, so that they can be evaluated by a best fit procedure of the experimental velocities to the calculated dispersion curves. This procedure has been used in the past for a number of different thin film materials, such as cubic Zinc Selenide [35], hexagonal and cubic Boron Nitride [36][37][38], hexagonal Zinc Oxyde [39], Tin Dioxide [40], Gallium- [32] or Indium- [41] Selenide, and isotropic dielectrics [42][43][44]. In all the above studies it has been put in evidence that the different elastic constants can influence the acoustic modes in a similar way, so that one has to face the problem of the correlation among the fitting parameters.…”
Section: Transparent Films With Deeply Submicrometric Thickness: Dispmentioning
confidence: 99%
“…where a" and a • are the lattice constants parallel and normal to the epitaxial layer and ei~ is the strain tensor. The non-zero components of the strain tensor in thin layers coherently grown on lattice-mismatched (100) substrates are exx = err = e and ezz = [2S12/($11 + Sl 2)] e. Therefore we obtain the difference, Aco, between LO phonon frequencies of strained and strain-free layers from (1) to (5) and the physical values of ZnSe: at 300K co o = 253 cm-1 (Landolt-Brrnstein 1982), S~1 = 2.237 x 10-12 and Sx2 = -0.8623 x 10-12dyn-1cm 2 calculated by elastic constants (Lee et al 1988), p = -4-10 • 1027 and q = -5-94 x 1027 S-2 (Cerdeira et a11972). The value calculated at 300K by assuming that the lattice mismatch between ZnSe and GaAs is accommodated only by uniform deformation for thin films is shown by a triangle in figure 2.…”
Section: Resultsmentioning
confidence: 97%
“…Recently electronic Raman scattering due to acceptor impurity (Walsh et al 1987) and Brillouin scattering (Lee et al 1988) were measured in MBE-ZnSe films. And further film thickness dependence of LO phonons by Raman measurement (Nakashima et al 1988) was explained in terms of the conversion of elastic strains to thermal strains.…”
Section: Introductionmentioning
confidence: 99%