No abstract

Brillouin scattering experiments have been performed on a series of epitaxially grown ZnSe (001) films on GaAs (001) of thicknesses between 0.23 and 2.0 μm. No thickness-dependent modifications of the elastic constants have been found. The obtained room-temperature values of C11=87.0, C12=54.7, and C44=39.1 GPa are in good agreement with literature values of ZnSe bulk material. The calculation of the theoretical cross sections shows a good agreement with the experimental data.

No abstract