Elasticity Study of Nanostructured Al and Al-Si(Cu) Films

Kabe, Yoshio; Tanimoto, H.; Mizubayashi, H.

doi:10.2320/matertrans.45.119

Cited by 8 publications

(9 citation statements)

References 22 publications

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“…For the Cu/Ta films [16], E f was almost the same to E <110> for t Cu > ~80 nm and gradually decreased with decreasing t Cu below ~ 80 nm, where the E f vs. t Cu data for t Cu > ~80 nm were well explained by the theoretical values of E f estimated by taking into account the crystallographic texture ( Fig. 3(a)) [7] and the internal stress (Fig. 3(c)) [19].…”

Section: Resultsmentioning

confidence: 80%

“…Such decrease in E f may be attributed to GBAP [7][8][9][10][11]. On the other hand, as seen for the Ta/Cu/Ta films, Ta capping caused a decrease in E f which was stronger with decreasing t Cu .…”

Section: Resultsmentioning

confidence: 82%

“…In nanostructured metals, the fractional volume of the grain boundary regions and the surface and/or interface regions increase with decreasing grain size, film thickness and/or interconnect size. For nanostructured thin films and/or specimens of Al [5][6][7], Cu [8,9] Au [10,11], the grain boundary anelastic process (GBAP) is thermally activated above 200 K and causes an increase in the internal friction and a considerable decrease in Young's modulus. On the other hand, the internal friction peak due to the GBAP in bulk Cu is observed near 500 K [12], indicating that the atomic process in nanostructured Cu may be not in the extension from that in bulk Cu.…”

Section: Introductionmentioning

confidence: 99%

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Elasticity study of very thin Cu films

Fujiwara

Tanimoto

Mizubayashi

2006

Materials Science and Engineering: A

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The elastic property and the surface morphology of Cu/Ta films and Ta/Cu/Ta films sputter-deposited on Si reed substrates were studied for the Cu film thickness, t Cu , between 7 and 1000 nm. A monotonic increase in the internal friction, Q -1 f , in the constituent Cu film above 200 K was commonly observed. For Cu/Ta films, Young's modulus of a Cu film, E f , showed good agreement with the theoretical value for t Cu > ~80 nm and a decrease with decreasing t Cu below ~80 nm. A decrease in Q -1 f after 400 K annealing, ΔQ -1 f,400K , and the surface roughness showed the local minimum and the local maximum near 80 nm, respectively, indicating that the properties of the Cu film were modified by subsequent deposition of a Cu layer (the self capping effect). For Ta/Cu/Ta films, Ta capping brought about an increase in the grain size parallel to the film surface, a decrease in the internal stress and a decrease in E f but no changes in the grain size normal to the film surface,f,400K and the outline of the surface roughness. These results are discussed in the light of the anelastic responses of grain boundaries and interface in nano-scale Cu films which may be important for down sizing of electric devices.

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Section: Resultsmentioning

confidence: 80%

Section: Resultsmentioning

confidence: 82%

Section: Introductionmentioning

confidence: 99%

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Elasticity study of very thin Cu films

Fujiwara

Tanimoto

Mizubayashi

2006

Materials Science and Engineering: A

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“…According to previous reports, the nominal Young's modulus and Poisson's ratio for Al are 72 GPa and 0.34, respectively. (23,24) For Ni, those values are 191 GPa and 0.30, respectively. (25) By substituting those literature values and the thicknesses into Eq.…”

Section: Resultsmentioning

confidence: 99%

Mechanical Reliability of Reactively Alloyed NiAl as a Structural Material

2016

Sensors and Materials

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In this study, for the practical use of reactively alloyed NiAl as a structural material, its mechanical reliability is evaluated. An Al/Ni multilayer film is attractive as a local heat source for soldering. To investigate the difference in mechanical characteristics between as-deposited Al/ Ni multilayer films and reactively alloyed NiAl films, quasistatic uniaxial tensile tests and stress relaxation tests were conducted. A higher Young's modulus and a higher strength were obtained in the NiAl films. The films also showed better consistency under a constant applied strain. Then, four-point bending tests were carried out to examine the fracture strength of reactively bonded solder joints and to specify the fracture origin. All the joints fractured at the interface of the SnAg solder layer and the reactively alloyed NiAl layer. The durability of the reactively alloyed NiAl in the joints is discussed in the light of the grain size evaluated by electron backscatter diffraction (EBSD) analysis.

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“…It is also reported that the stress induced by EM in Cu/low-dielectric-constant-material interconnects will be a serious issue because the low-dielectric-constant-materials tend to be mechanically weak [7]. For the mechanical properties of nanocrystalline specimens and/or thin films of Au [8], Al [9] and Cu [10], the grain boundary anelastic process (GBAP) is thermally activated above 200 K and causes a considerable decrease in the Young's modulus. On the other hand, an internal friction peak due to the GBAP in bulk Cu is observed near 500 K [11], indicating that the EM process associated with grain boundaries in nanostructured Cu may be not the same as that in bulk Cu.…”

Section: Introductionmentioning

confidence: 99%

Anelasticity study on electromigration effect in Cu thin films

Mizubayashi

Goto

Ebisawa

et al. 2006

Materials Science and Engineering: A

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Electromigration (EM) tests on Cu thin film circuits below or near 373 K with the current density between 1x10 9 A/m 2 and 8x10 9 A/m 2 were carried out by means of the composite vibrating reed method. The resonant frequency (f) and the internal friction (Q-1) of the composite reed and the resistivity (R) of the thin film circuit were measured during isothermal EM tests for as deposited Cu/Ta films, Cu/Ta films annealed at 450 K and as deposited Ta/Cu/Ta films. An increase in f, a decrease in Q-1 and a decrease in R were commonly observed. The activation energies found for the EM process (E EM) range between 0.21 and 0.41 eV for the as-deposited Cu/Ta films, between 0.21 and 0.59 eV for the annealed Cu/Ta films and around 0.3 eV for as deposited Ta/Cu/Ta films. It is suggested that a previously unrecognized mass transport process with low E EM operates in these Cu thin films.

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Elasticity Study of Nanostructured Al and Al-Si(Cu) Films

Cited by 8 publications

References 22 publications

Elasticity study of very thin Cu films

Elasticity study of very thin Cu films

Mechanical Reliability of Reactively Alloyed NiAl as a Structural Material

Anelasticity study on electromigration effect in Cu thin films

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