Electric Control of Spin Injection into a Ferroelectric Semiconductor

Liu, Xiaohui; Burton, John; Zhuravlev, M. Ye.; Tsymbal, Evgeny Y.

doi:10.1103/physrevlett.114.046601

Cited by 15 publications

(9 citation statements)

References 44 publications

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“…Therefore, this indicates that the ferroelectric state is preserved in BTO even when charge/ion movement occurs in the second switching process. This is consistent with previous experimental reports and calculations that ferroelectricity is robust in the presence of defects. In contrast, the Pt/STO/NSTO behaves differently in the G – V curve as shown in Figure d, which shows a symmetrical G – V behavior around V = 0 in the low voltage regime (−0.1 V < V < 0.1 V).…”

supporting

confidence: 94%

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Lü

Zheng

et al. 2017

Advanced Materials

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Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO FTJ by comparing BaTiO with SrTiO based tunnel junctions. This coexistence results in two distinguishable loops with multi-nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO switching voltage, showing OVM being its origin. BaTiO based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.

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supporting

confidence: 94%

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Lü

Zheng

et al. 2017

Advanced Materials

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“…Here the electronic potential profile (Figures 3a,b) is obtained by solving self-consistently the Poisson equation for the junction, imposing the boundary conditions at interfaces and assuming that the local electron concentration is a linear function of the electrostatic potential. 41,42 As is seen from Figure 3c, the TER increases markedly when the carrier concentration is reduced. This reflects the increase of the Schottky barrier width for polarisation pointing into the semiconductor, as the result of the enhanced depletion region.…”

Section: Mechanisms Of Ter and Their Experimental Manifestationmentioning

confidence: 69%

Predictive modelling of ferroelectric tunnel junctions

et al. 2016

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Ferroelectric tunnel junctions combine the phenomena of quantum-mechanical tunnelling and switchable spontaneous polarisation of a nanometre-thick ferroelectric film into novel device functionality. Switching the ferroelectric barrier polarisation direction produces a sizable change in resistance of the junction-a phenomenon known as the tunnelling electroresistance effect. From a fundamental perspective, ferroelectric tunnel junctions and their version with ferromagnetic electrodes, i.e., multiferroic tunnel junctions, are testbeds for studying the underlying mechanisms of tunnelling electroresistance as well as the interplay between electric and magnetic degrees of freedom and their effect on transport. From a practical perspective, ferroelectric tunnel junctions hold promise for disruptive device applications. In a very short time, they have traversed the path from basic model predictions to prototypes for novel non-volatile ferroelectric random access memories with non-destructive readout. This remarkable progress is to a large extent driven by a productive cycle of predictive modelling and innovative experimental effort. In this review article, we outline the development of the ferroelectric tunnel junction concept and the role of theoretical modelling in guiding experimental work. We discuss a wide range of physical phenomena that control the functional properties of ferroelectric tunnel junctions and summarise the state-of-the-art achievements in the field.Predictive modelling of FTJs JP Velev et al

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“…On the other hand, the present work also facilitates the design of multifunctional metal/semiconductor devices, such as the recent progress in SrRuO 3 /n-type BTO interface, in which the polarization reversal not only gives rise to an Ohmic to Schottky transition but also controls spin injection from the ferromagnetic electrode. 43,44 See supplementary material for the surface topography of BTO/NSTO heterostructure, the thermodynamic calculation for fully strained BTO film, the evolution of ON state transport with increasing temperature, the comparison of the OFF state J F between the measured and calculated values, and the I-V curves of the Pt/NbSTO junction.…”

Section: (B)mentioning

confidence: 99%

High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

Jin

Chen

et al. 2017

Applied Physics Letters

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Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO 3 /Nb:SrTiO 3 tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO 3 barrier via a ferroelectric field effect. The Pt/BaTiO 3 /Nb:SrTiO 3 device exhibits a giant R OFF /R ON resistance ratio of $3 Â 10 5 at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO 3 barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of $0.93 eV and room-temperature retention time of $70 years can be extracted.

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Electric Control of Spin Injection into a Ferroelectric Semiconductor

Abstract: Zhuravlev, M. Ye.; and Tsymbal, Evgeny Y., "Electric Control of Spin Injection into a Ferroelectric Semiconductor" (2015). Evgeny Tsymbal Publications. 56.

Cited by 15 publications

References 44 publications

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Predictive modelling of ferroelectric tunnel junctions

High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

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