2020
DOI: 10.1038/s41598-020-62820-3
|View full text |Cite
|
Sign up to set email alerts
|

Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy

Abstract: We directly measure the electric dipole of inn quantum dots (QDs) grown on in-rich inGan layers by Kelvin probe force microscopy. This significantly advances the understanding of the superior catalytic performance of inn/inGan QDs in ion-and biosensing and in photoelectrochemical hydrogen generation by water splitting and the understanding of the important third-generation inGan semiconductor surface in general. the positive surface photovoltage (SpV) gives an outward QD dipole with dipole potential of the ord… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
12
0

Year Published

2020
2020
2022
2022

Publication Types

Select...
6

Relationship

2
4

Authors

Journals

citations
Cited by 11 publications
(12 citation statements)
references
References 30 publications
0
12
0
Order By: Relevance
“…Surface photovoltage (SPV) is the change in surface potential caused by light illumination [1,2] and is measured to determine such features as band bending [3,4], the lifetimes of excited carriers [5][6][7], the minority carrier diffusion length [8,9], and the plasmonic effect [10][11][12]. The local SPV is usually measured by Kelvin probe force microscopy (KPFM) [13][14][15][16][17][18][19][20][21], which is based on atomic force microscopy (AFM) [22]. KPFM measures the contact potential difference (CPD), which corresponds to the difference in work function between the tip and the sample, consecutively in darkness and under illumination, to determine the SPV values: SPV = CPD light − CPD dark .…”
Section: Introductionmentioning
confidence: 99%
“…Surface photovoltage (SPV) is the change in surface potential caused by light illumination [1,2] and is measured to determine such features as band bending [3,4], the lifetimes of excited carriers [5][6][7], the minority carrier diffusion length [8,9], and the plasmonic effect [10][11][12]. The local SPV is usually measured by Kelvin probe force microscopy (KPFM) [13][14][15][16][17][18][19][20][21], which is based on atomic force microscopy (AFM) [22]. KPFM measures the contact potential difference (CPD), which corresponds to the difference in work function between the tip and the sample, consecutively in darkness and under illumination, to determine the SPV values: SPV = CPD light − CPD dark .…”
Section: Introductionmentioning
confidence: 99%
“…The same holds for thickness fluctuations of thin InN layers, representing shallow QDs, such as for the 0.5 ML InN/InGaN layer. 28 For large QDs such as for the 3 ML InN/InGaN QDs, the number of bound electron states is increased, even more when the QDs coalesce toward a thick InN layer. More electrons enter the QDs to screen the surface donors.…”
Section: Resultsmentioning
confidence: 99%
“…The dependence of the photocurrent density and output power density on the structural parameters of the InN/InGaN photoanodes is a direct consequence of the catalytic activity of the QDs. The catalytic activity of the QDs originates from their outward pointing electric dipole, attracting electrons to enhance the oxidation reaction of the target reactant in the electrolyte. The electric dipole is generated by the high density of intrinsic, positively charged surface donors on the c -plane InN QDs, together with the zero-dimensional quantum confinement of electrons in the QDs .…”
Section: Resultsmentioning
confidence: 99%
“…Surface morphology was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM) [ 18 ].…”
Section: Methodsmentioning
confidence: 99%