Electric double-layer transistors: a review of recent progress

Du, Haiwei; Lin, Xi; Xu, Zhemi

doi:10.1007/s10853-015-9121-y

Cited by 214 publications

(195 citation statements)

References 190 publications

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“…Conventional EDL capacitors provide values of capacitance of about 5-20 µF cm −2 , [117] whereas pseudocapacitors can reach 10-100 times larger values of C. [118,119] After a brief description of the main mechanisms of charge carrier doping and associated parameters, we shall now present a survey of the results of charge-mediated ME coupling in all-solid-state and solid/liquid ME composites reported in the literature. In general, systems with large values of C are preferable, because they enable large accumulation of surface charge by using low voltages.…”

Section: Me Coupling Via Charge Carrier Dopingmentioning

confidence: 99%

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

2019

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activities. [1][2][3][4][5][6][7][8][9][10][11][12] From a technological perspective, several low-power ME applications have been envisioned, comprising devices for memory storage and processing, [13,14] tuning and filtering of RF/microwave signals, [15,16] energy conversion and harvesting, [17,18] sensing, [19,20] and actuation. [21,22] By definition, the direct ME effect is manifested when an electric polarization P is induced by usage of a magnetic field H in accordance with Δ Δ to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems. chemical control of the physical (magnetic) properties in metals and oxide nanostructures; electrostatic doping via field-effect; reversible magnetic phase transitions induced with ionic liquid charging; spintronics; printed electronics; fabrication of solution-processed devices (transistors, etc.)There are some nontrivial reasons explaining why solid/ liquid ME composites developed later than all-solid-state approaches. From an experimental perspective, the usage of conventional aqueous electrolytes poses some restrictions in terms of the operating conditions. Concerning the applied voltage, water electrolysis already occurs at a low voltage of

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Section: Me Coupling Via Charge Carrier Dopingmentioning

confidence: 99%

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

2019

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“…Compared with diode-like photodetectors, organic phototransistors demonstrated a much higher photoresponse covering the UV-visible-NIR region due to a different sensing mechanism. [51] For the abovementioned topics, previous reviews have covered high-k dielectrics, [31,52,53] novel-concept FETs, [40,54] organic photodetectors, [8,43,55] optoelectronic materials, [45,46,56] and organic thermoelectrics. The application of organic phototransistors is promising for high-performance NIR sensing.…”

mentioning

confidence: 99%

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

112

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The operating frequency of ring oscillators or radio-frequency identification tags made by OFETs have surpassed MHz. [27,28] With the growing level of integration and the operating frequency of OFETs, the power dissipation issue can no longer be ignored. Considering the material composition of most organic semiconductors, controlling the temperature rise within a reasonable range is important to avoid the unwanted degradation of organic materials and therefore maintain stable device operation. In addition, OFETs fabricated on flexi ble substrates somehow limit the use of conventional batteries. To avoid externally wiring the batteries, flexible OFET-based circuits can be expected to be self-powered by integrating them with organic solar cells, thermoelectric modules, or triboelectric nanogenerators. [29,30] All of these demands require OFETs operating with extremely low power consumption. Rapid progress has been made in this field, and research efforts have focused on reducing the operating voltage of OFETs, [31][32][33] enhancing the switching efficiency of transistors, [34][35][36][37] and demonstrating several novel device concepts for low-power applications. [38][39][40][41][42] Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices dueThe organic field-effect transistor (OFET) is the basic building block of integrated circuits. The charge carrier mobility and operating frequency of OFETs have continued to increase; therefore, the power dissipation of OFETs can no longer be ignored. Many research efforts have been made to develop low-power-consumption OFETs and complementary circuits. Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices. Organic phototransistors show considerably higher photo responsivity than other photodetector architectures due to field-effect charge modulation. The photoinduced gate modulating largely suppresses the dark current while simultaneously providing gain. These characteristics may favor NIR light detection and suggest that the organic phototransistor is a promising candidate for optoelectronic applications in the NIR regime. For organic thermoelectric applications, OFETs can work as a powerful tool for examining the charge and energy transport in the organic semiconductor, thus giving insight into organic thermoelectric studies. In this review, the authors highlight recent advances in OFET-related energy topics, including lowpower-consumption OFETs, NIR photodetectors, and organic thermoelectric devices. The remaining challenges in the field will also be discussed.

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“…95 As mentioned before, the decreased mobility of BP transistor is attributed to the unstable surface and the existence of Schottky barrier. 112,113 As the high-density charge carriers can be accumulated by the EDLT technique (e.g. 111 With higher capacitance, high-k materials can effectively solve the problem of dielectric breakdown and increase the accumulated carrier density.…”

Section: Avoiding Surface Degradationmentioning

confidence: 99%

Recent developments in black phosphorus transistors

2015

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The discovery of graphene has inspired great research interest in two-dimensional (2D) layered nanomaterials during the past decade. As one of the newest members in 2D layered nanomaterials family, black phosphorus (BP), with puckered structure similar to graphene, has shown great potential in novel nanoelectronics owing to its thickness-dependent bandgap. Especially, the unique in-plane anisotropy and high carrier mobility enable BP to be a promising candidate for field-effect transistor (FET) applications. In addition, monolayer or few-layer BP can be combined into van de Waal heterostructures and this opens up a pathway for overcoming existing problems such as impurity scattering and surface degradation or achieving functionalities. In this article, we will review typical physical and chemical properties of BP and provide an overview of the recent development in BP-based transistors. With this review, we also discuss the current challenges in BP transistors and future research directions.2 interactions between adjacent layers. 3 For example, as a typical representative of transition metal dichaldogenides (TMDs), MoS 2 with a relatively large intrinsic bandgap of 1.8 eV shows superior on/off ratio and ultralow standby power dissipation. 4 Generally, MoS 2 exhibits n-type characteristics because of the presence of S vacancies and strong Fermi-level pinning near the conduction band, 5 and has great potential in practical electronic and optoelectronic applications. 6 However, in spite of many promising theoretical predications, the observed mobility of TMDs based device is still relatively low due to the heavy effective mass of carriers and the scattering mechanisms, especially the phonon scattering at room temperature. 7, 8 Thus, the majority of TMDs materials have not been demonstrated for high-performance radio frequency (RF) transistors. 3At the beginning of 2014, black phosphorus (BP), one of the latest members of 2D layered semiconducting materials has been rediscovered from the perspective of 2D materials for transistors. 9 Although BP was discovered a century ago, there have been only a few studies focusing on the utilization of BP due to the difficulty in synthesis. 10 Recently, it has been found that the moderate and tunable bandgap of BP provides an alternative for next generation nanoelectronic applications. Similar to graphene, single-layered or few-layered black phosphorus can be obtained by mechanical exfoliation and they exhibit unexpected properties compared with their bulk counterpart. Moreover, as a single-elemental layered material, BP possesses lower spin-orbit coupling because of relatively lighter phosphorus atom, which is more favourable for spin transport. 11The atomic structure and properties of main 2D layered materials are listed in Table 1, in which we select MoS 2 as a representative of TMDs. We also highlight hexagonal boron nitride (h-BN) as a graphite-type structured material, which a good gate insulator for 2D materials based FETs because of its ultra-flat and charged impurity-fre...

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Electric double-layer transistors: a review of recent progress

Cited by 214 publications

References 190 publications

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Recent developments in black phosphorus transistors

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