Electric double layer transistors with ferroelectric BaTiO3 channels

Ito, Meiichi; Matsubara, Yosuke; Kozuka, Y.; Takahashi, Kei; Kagawa, Fumitaka; Ye, J. T.; Iwasa, Yoshihiro; Ueno, Kazunori; Tokura, Y.; Kawasaki, Masashi

doi:10.1063/1.4881059

Cited by 11 publications

(6 citation statements)

References 22 publications

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“…In addition to causing the cation nonstoichiometry of those films, the deviation from the growth window might degrade the crystalline quality and induce defects at the interface between the film and the substrate, resulting in strain relaxation. Ferroelectricity was confirmed by piezoresponse force microscopy (PFM) at room temperature 17) for one of the BaTiO 3 films that was grown at 870 °C and TTIP/Ba = 28 within the stoichiometric growth window clarified in this paper. To perform the PFM measurement, a conducting bottom electrode is necessary.…”

mentioning

confidence: 72%

Single-crystalline BaTiO₃films grown by gas-source molecular beam epitaxy

Matsubara

Takahashi

Tokura

et al. 2014

Appl. Phys. Express

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Thin BaTiO3 films were grown on GdScO3 (110) substrates by metalorganic gas-source molecular beam epitaxy. Titanium tetra-isopropoxide (TTIP) was used as a volatile precursor that provides a wide growth window of the supplied TTIP/Ba ratio for automatic adjustment of the film composition. Within the growth window, compressively strained films can be grown with excellent crystalline quality, whereas films grown outside of the growth window are relaxed with inferior crystallinity. This growth method will provide a way to study the intrinsic properties of ferroelectric BaTiO3 films and their heterostructures by precise control of the stoichiometry, structure, and purity.

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mentioning

confidence: 72%

Single-crystalline BaTiO₃films grown by gas-source molecular beam epitaxy

Matsubara

Takahashi

Tokura

et al. 2014

Appl. Phys. Express

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“…Recently, ionic liquid-gated BaTiO 3 single crystal and thin film for EDLTs have been reported by Kozuka and coworkers [75]. The result demonstrated that the on/off ratio exceeding 10 5 at 220 K and similar metallic behavior of channel resistance was observed in thin film at 150 K, although the insulating behavior below this temperature was recovered.…”

Section: Other Phenomena In Perovskite-based Edltsmentioning

confidence: 86%

Electric double-layer transistors: a review of recent progress

2015

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With the miniaturization of electronic devices, it is essential to achieve higher carrier density and lower operation voltage in field-effect transistors (FETs). However, this is a great challenge in conventional FETs owing to the low capacitance and electric breakdown of gate dielectrics. Recently, electric double-layer technology with ultra-high charge-carrier accumulation at the semiconductor channel/electrolyte interface has been creatively introduced into transistors to overcome this problem. Some interesting electrical transport characteristics such as superconductivity, metal-insulator transition, and tunable thermoelectric behavior have been modulated both theoretically and experimentally in electric double-layer transistors (EDLTs) with various semiconductor channel layers and electrolyte materials. The present article is a review of the recent progress in the EDLTs and the impacts of EDLT technology on modulating the charge transportation of various electronics.

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“…The films were insulated for x ≤ 0.05 and turned metallic at above x ~ 0.2, which is far above the doping level of the present study. By means of electrostatic carrier doping, BTO single crystalline films 21 and SmTiO 3 /BTO heterostructures 22 have been shown to be conductive. However, the relationship between carrier doping and polarity in BTO remains elusive.…”

Section: Introductionmentioning

confidence: 99%

“…Metalorganic gas-source (MO) molecular beam epitaxy (MBE) was used for film growth. This method has proven effective for growing high-quality complex oxide thin films 21 , 23 – 25 . Films grown in this way are free of twin boundaries due to a coherent epitaxy with a biaxial compressive strain from a substrate.…”

Section: Introductionmentioning

confidence: 99%

Polar metal phase stabilized in strained La-doped BaTiO3films

Takahashi

Matsubara

Bahramy

et al. 2017

Sci Rep

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Ferroelectric polarization and metallic conduction are two seemingly irreconcilable properties that cannot normally coexist in a single system, as the latter tends to screen the former. Polar metals, however, defy this rule and have thus attracted considerable attention as a new class of ferroelectrics exhibiting novel properties. Here, we fabricate a new polar metal film based on the typical ferroelectric material BaTiO3by combining chemical doping and epitaxial strain induced by a substrate. The temperature dependences of the c-axis lattice constant and the second harmonic generation intensity of La-doped BaTiO3films indicate the existence of polar transitions. In addition, through La doping, films become metallic at the polar phase, and metallicity enhancement at the polar state occurs in low-La-doped films. This intriguing behaviour is effectively explained by our first-principles calculations. Our demonstration suggests that the carrier doping to ferroelectric material with epitaxial strain serves as a new way to explore polar metals.

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Electric double layer transistors with ferroelectric BaTiO3 channels

Cited by 11 publications

References 22 publications

Single-crystalline BaTiO₃films grown by gas-source molecular beam epitaxy

Single-crystalline BaTiO₃films grown by gas-source molecular beam epitaxy

Electric double-layer transistors: a review of recent progress

Polar metal phase stabilized in strained La-doped BaTiO3films

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Electric double layer transistors with ferroelectric BaTiO3 channels

Cited by 11 publications

References 22 publications

Single-crystalline BaTiO3films grown by gas-source molecular beam epitaxy

Single-crystalline BaTiO3films grown by gas-source molecular beam epitaxy

Electric double-layer transistors: a review of recent progress

Polar metal phase stabilized in strained La-doped BaTiO3films

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Product

Resources

About

Single-crystalline BaTiO₃films grown by gas-source molecular beam epitaxy

Single-crystalline BaTiO₃films grown by gas-source molecular beam epitaxy