Electric field assisted growth and field emission properties of thermally oxidized CuO nanowires

Abstract

The growth and field emission properties of thermally oxidized CuO nanowires are influenced by the electric field intensity and direction.

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

“…To meet this demand, a wide variety of metal oxide semiconductor nanostructures have been studied including ZnS, TiO 2 , CuO, SnO 2 , etc. [11][12][13] Among these materials, Silicon carbide (SiC) as a significant third-generation semiconductor material, with wide band gap (2.2-3.3 eV), mechanical stabilities, high thermal stability, high electrical and thermal conductivities, which is considered as one of the most promising materials for the potential application in the field of field emission devices. 14 Previously, in depth investigations into the growth of various SiC nanostructure morphology and tailoring the bandage to lower the field emission properties have been carried out.…”

Fabrication of periodic arrays of needle-like Si nanowires on (001)Si and their enhanced field emission characteristics

“…The results clearly demonstrated that the eld emission property of vertical Si nanowires was greatly enhanced aer the multiple ACER cycle process, mainly due to the formation of sharp-tip structures. Compared with previously reported data, the turn-on eld value of the periodic arrays of vertical tapered Si nanowires aer the 4 th ACER cycle (1.3 V mm À1 ) obtained in this study is much lower than that of most Si-based nanostructures (2.1-16.5 V mm À1 ), [3][4][5][6][7][8][9][10][30][31][32][33][34][35] and other semiconductor nanostructures, such as CuO nanowires (5.3-8.6 V mm À1 ), 36,37 ZnO nanopencils (3.2-3.7 V mm À1 ), 38,39 and GaN nanoneedles (3.5-9.0 V mm À1 ). 40,41 However, it should be noted from Fig.…”

Influence of an external electric field on the rapid synthesis of MoO3 micro- and nanostructures by Joule heating of Mo wires

“…Results on the synthesis of Cu nanowires under a STM tip 24 and on CuO nanowires 25 by heating Cu foils at 400 C on a hotplate indicated that the process is favored by the application of an external electric eld, which promotes the diffusion/electromigration of Cu ions. 25 In the case of Mo, a thermal assisted electromigration process would enhance the out diffusion of Mo ions in the metal wire leading to the rapid growth of MoO 3 plates. Under electric eld a higher MoO 3 synthesis yield is observed with formation of the structures at lower temperatures than in absence of electric eld and in a faster process with times down to few seconds.…”