Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

Orlov, M. L.; Волкова, Н. С.; Ivina, N. L.; Orlov, L. K.

doi:10.1134/s1063782618090129

Cited by 3 publications

(1 citation statement)

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“…It includes active development of the technologies of manufacturing and growing lamellar nanostructures, which can create layers of the thickness of several atomic layers. In this regard, there is an increasing number of the studies dedicated to theoretical and experimental research of the resonance transmission of the charge carriers through the multi-layer quantum-sized structures [4][5][6][7][8]. The gas of the free charge carriers in layers of the thickness of about an atomic one can be regarded as a quasi-twodimensional gas contained in a special well with endlessly high walls.…”

Section: Introductionmentioning

confidence: 99%

Interaction of an electromagnetic H-wave with a semiconductor nanolayer

Кузнецова

Savenko

2022

Semiconductors

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A theoretical model of the electromagnetic H-wave interaction with a semiconductor nanolayer, the thickness of which can be comparable to or less than charge carrier de Broglie wavelength is constructed. We assume the frequency range of the electromagnetic wave to be much less than the plasma frequency. Analytical expressions are derived for optical coefficients as the functions of the dimensionless thickness, electromagnetic wave frequency and incidence angle, chemical potential, and surface roughness parameters. The results derived for the limiting cases of degenerate and nondegenerate electron gas are analyzed. Keywords: nanolayer, Liouville equation, de Broglie wavelength, Soffer model, optical coefficients.

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Section: Introductionmentioning

confidence: 99%

Interaction of an electromagnetic H-wave with a semiconductor nanolayer

Кузнецова

Savenko

2022

Semiconductors

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Characterization of Interface Layers of a Solid Solution Formed During the Growth of a Carbide Layer on Silicon From Hydrogen Containing Compounds

et al. 2021

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Photoconductivity Resonance Tunneling Spectroscopy of the Electron States in the InAs/GaAs Quantum Dot Heterostructures

2019

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The electric-field behavior of the resonance features in the photoelectric characteristics of InAs/GaAs heterostructures is studied. We discuss the emission mechanism of the charge carriers excited from InAs quantum dots into the GaAs matrix. It was shown that at the temperature of liquid nitrogen the photocurrent in a strong transverse electric field is only determined by the effect of electron tunneling through the barrier formed at the quantum-dot interfaces. Comparison of the experimental curves with the quasi-classical expression for the tunneling current component and analysis of the potential structure allowed us to specify some parameters of investigated heterostructures. Analysis of the electric-field dependences of the photocurrent-tunneling component revealed resonance peculiarities connected with the local defect states in the vicinity of InAs/GaAs interface.

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Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

Cited by 3 publications

References 18 publications

Interaction of an electromagnetic H-wave with a semiconductor nanolayer

Interaction of an electromagnetic H-wave with a semiconductor nanolayer

Characterization of Interface Layers of a Solid Solution Formed During the Growth of a Carbide Layer on Silicon From Hydrogen Containing Compounds

Photoconductivity Resonance Tunneling Spectroscopy of the Electron States in the InAs/GaAs Quantum Dot Heterostructures

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