Electric Field Domain Formation and Multistability in Semiconductor Multiple Quantum Wells in the Presence of THz Radiation

Abstract

We propose a self‐consistent microscopic model of vertical sequential tunneling through multiple quantum wells in the presence of THz radiation. The model considers the Coulomb interaction in a mean field approximation. We analyze the current density through a double quantum well and a superlattice and study the formation of electric field domains in the presence of THz radiation and the appearance of new multistability regions, both caused by the combined effect of the strong nonlinearity coming from the Coulomb interaction and the new photon‐assisted tunneling channels. We show how the electric field domains can be supported by the virtual photonic sidebands due to multiple photon emission and absorption.

Non-linear dynamics of semiconductor superlattices

“…In a more strongly coupled SL under terahertz radiation, the same authors observed dynamic localization, absolute negative conductance and stimulated, multiphonon emission [274]. Subsequently, a theoretical investigation by Aguado and Platero [275,276] using a self-consistent microscopic model of sequential tunnelling through multiple quantum wells in the presence of terahertz fields showed how the EFDs can be supported by virtual photonic sidebands due to multiple photon emission and absorption. Very recently, the same authors [17] published a detailed review of photon-assisted transport in semiconductor nanostructures.…”