2010
DOI: 10.1002/adma.200903841
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Electric‐Field Enhancement of Photovoltaic Devices: A Third Reason for the Increase in the Efficiency of Photovoltaic Devices by Carbon Nanotubes

Abstract: Electric‐field enhancement of photovoltaic devices by carbon nanotubes (CNTs) is reported as a third alternative for increasing the efficiency of photovoltaic devices. Due to the formation of an efficient electronic energy‐cascade structure, the decrease of the interfacial resistance, and the improvement of the electrical field, the power‐conversion efficiency of solar cells was increased by 22% in the presence of the SWNTs.

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Cited by 19 publications
(21 citation statements)
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“…In this regard, SnSe can be a better option as a photovoltaic material as it is composed of abundant and nontoxic elements. There are few reports on the solar cells utilizing SnSe as an absorber layer, but with moderate power conversion efficiencies [12][13][14][15][16][17]. SnSe 2 presents a hexagonal crystal structure of the type CdI 2 characterized by sandwiches of Sn-Se-Sn bonded by Van der Waals forces and has been recognized as an n-type semiconductor with a direct band gap energy of 1.59 eV.…”
Section: Introductionmentioning
confidence: 99%
“…In this regard, SnSe can be a better option as a photovoltaic material as it is composed of abundant and nontoxic elements. There are few reports on the solar cells utilizing SnSe as an absorber layer, but with moderate power conversion efficiencies [12][13][14][15][16][17]. SnSe 2 presents a hexagonal crystal structure of the type CdI 2 characterized by sandwiches of Sn-Se-Sn bonded by Van der Waals forces and has been recognized as an n-type semiconductor with a direct band gap energy of 1.59 eV.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8] A number of optoelectronic and photovoltaic devices with CNT film electrodes has been demonstrated recently, such as organic solar cells and light emitting diodes (LEDs). 1,2,[5][6][7] An area of particular importance is the integration of CNT films into existing semiconductor technologies by using them as electrodes on conventional semiconductor substrates, such as silicon. In particular, it has been recently shown by our group that CNT film makes a Schottky contact on silicon with a barrier height of 0.41 eV for p-type Si.…”
Section: Introductionmentioning
confidence: 99%
“…These unique properties can be controlled through chemical and physical modifications, so that the pristine and/or modified CNTs have been introduced in various systems. [5][6][7][8][9][10][11][12][13][14] In particular, the utilization of CNTs in the photoinduced charge transfer systems recently draw much attention due to their potential applications to several key areas such as solar cells, photosensors, photocatalysis, etc. 5-7 15-17 On the other hand, the pristine CNTs are insoluble in organic solvent and/or water which makes it difficult to form thin films, so that limits their applications to the devices, 18 19 Therefore, many efforts focus on the preparation of soluble CNTs by chemical and/or physical * Authors to whom correspondence should be addressed.…”
Section: Introductionmentioning
confidence: 99%
“…−4.7, 14 ∼ − 4 5,8 and −4.2 eV,28 respectively. The lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) of acetylene polymer are −3.4 and −5.4 eV, respectively 25.…”
mentioning
confidence: 96%