Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Narita, Toshio; Sakurai, Hideki; Boćkowski, Michał; Kataoka, Keita; Suda, Jun; Kachi, Tetsu

doi:10.7567/1882-0786/ab4934

Cited by 32 publications

(31 citation statements)

References 31 publications

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“…Figure 5 a,b shows the depth distributions of Mg and H measured by SIMS. The incorporation of H in the samples during UHPA was reported by Narita et al 12 . They suggested that unintentional moisture may exist in the UHPA chamber, and this caused doping of H into the sample during UHPA.…”

Section: Resultsmentioning

confidence: 60%

“…The present samples were undoped GaN films with 2-µm-thickness grown by using metal-organic vapor phase deposition (MOVPE). Details on the sample preparation process and the electric properties of the samples after UHPA are given elsewhere 11,12 . Before the deposition of the top GaN film, a 0.2-μm-thick buffer layer (n + -GaN) was grown on c+-GaN substrates obtained by hydride vapor phase epitaxy (HVPE).…”

Section: Methodsmentioning

confidence: 99%

“…The observed box profile of H is unlikely explainable assuming the diffusion model with a constant source at the surface. It is well known that H incorporation is often caused by Mg-doped GaN because of the low formation energy of Mg Ga -H pairs 12,30 . For the sample annealed at 1000 °C, vacancy-type defects with a high concentration still remained, and as can be seen in Fig.…”

Section: -1480mentioning

confidence: 99%

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Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Uedono

Sakurai

Narita

et al. 2020

Sci Rep

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Vacancy-type defects in Mg-implanted GaN were probed by using a monoenergetic positron beam. Mg ions were implanted into GaN to obtain 0.3-μm-deep box profiles with Mg concentrations of 1 × 1019 cm−3. The major defect species in an as-implanted sample was determined to be Ga-vacancy related defects such as a complex between Ga and N vacancies. The sample was annealed under a nitrogen pressure of 1 GPa in a temperature range of 1000–1480 °C without a protective capping layer. Compared with the results for Mg-implanted GaN annealed with an AlN capping layer, the defect concentration was decreased by the cap-less annealing, suggesting that the surface of the sample was an effective sink for vacancies migrating toward the surface. Depth distributions of Mg after annealing above 1300 °C were influenced by the presence of residual vacancies at this temperature. Hydrogen atoms were unintentionally incorporated into the sample during annealing, and their diffusion properties were also affected by both vacancies and Mg.

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Section: Resultsmentioning

confidence: 60%

Section: Methodsmentioning

confidence: 99%

Section: -1480mentioning

confidence: 99%

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Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Uedono

Sakurai

Narita

et al. 2020

Sci Rep

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“…Recently, very effective activation by ultra-high pressure annealing (UHPA) of magnesium (Mg)-implanted p-type GaN has been announced [4]. Investigation of Mg diffusion during the UHPA process also started [5]. Next to Mg, beryllium (Be) is one of the most promising acceptor dopants for GaN.…”

Section: Introductionmentioning

confidence: 99%

Diffusion of Mn in gallium nitride: Experiment and modelling

Jakieła

Gas

Sawicki

et al. 2019

Journal of Alloys and Compounds

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Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1000°C and 1400°C, under high nitrogen pressure. Beryllium profiles were analyzed in the as-implanted and annealed samples by secondary ion mass spectrometry. It was shown that the diffusion of the dopant results from the combination of two mechanisms: rapid interstitial and slow interstitial-substitutional diffusion.The pre-exponential factor as well as activation energy for both diffusion paths were determined. Moreover, from the characteristic features of beryllium depth profiles, the formation energies of gallium vacancy and beryllium in interstitial position were calculated and compared to the theoretical values.

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“…Although these results suggest that the UHPA process is a promising post-implantation process, several technical issues, such as the inclusion of impurities, costs, throughput, etc., must be overcome for industrial applications of UHPA. Thus, a subsequent ion implantation (or co-implantation) technique that is used before annealing at atmospheric pressure is also a potential candidate 16,17 .…”

mentioning

confidence: 99%

Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

Uedono

Tanaka

Takashima

et al. 2021

Sci Rep

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A process for activating Mg and its relationship with vacancy-type defects in Mg-implanted GaN were studied by positron annihilation spectroscopy. Mg+ ions were implanted with an energy of 10 keV, and the Mg concentration in the subsurface region (≤ 50 nm) was on the order of 1019 cm−3. After the Mg-implantation, N+ ions were implanted to provide a 300-nm-deep box profile with a N concentration of 6 × 1018 cm−3. From capacitance–voltage measurements, the sequential implantation of N was found to enhance the activation of Mg. For N-implanted GaN before annealing, the major defect species were determined to Ga-vacancy related defects such as divacancy. After annealing below 1000 °C, the clustering of vacancies was observed. Above 1200 °C annealing, however, the size of the vacancies started to decrease, which was due to recombinations of vacancy clusters and excess N atoms in the damaged region. The suppression of vacancy clustering by sequential N-implantation in Mg-implanted GaN was attributed to the origin of the enhancement of the Mg activation.

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Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Cited by 32 publications

References 31 publications

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Diffusion of Mn in gallium nitride: Experiment and modelling

Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

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