2013
DOI: 10.7567/jjap.52.110129
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Electric-Field-Induced Superconductivity on an Organic/Oxide Interface

Abstract: Many superconductors have been developed by inducing charge carriers into a mother insulator compound. Chemical substitution of impurity atoms is usually used for inducing charge carriers, and this method is called “chemical doping”. Another method to tune charge carrier density is the electric field effect, which is widely utilized as a field-effect transistor. Here, we review recent progress in an electric field-effect study for developing a new oxide superconductor with an organic electrolyte gate. We first… Show more

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“…In particular, the field effect with ionic liquid electrolytes demonstrating field-induced superconductivity 2 3 and carrier-induced ferromagnetism 4 in insulators, in addition to electronic phase switching in strongly electron correlated systems 5 6 7 8 9 10 11 12 13 14 , has furthered this field. This method is characterized by an ultrathin capacitor-like structure formed by electrolyte ions at the electrolyte/oxide interface, called the electric double layer (EDL) 15 . The very strong electric field generated within the EDL makes it possible to accumulate a high density of charge carriers on the oxide channel (as high as 10 14–15 cm −2 ), without being restricted by the hetero-structuring processes generally required for experiments with solid gate dielectrics.…”
mentioning
confidence: 99%
“…In particular, the field effect with ionic liquid electrolytes demonstrating field-induced superconductivity 2 3 and carrier-induced ferromagnetism 4 in insulators, in addition to electronic phase switching in strongly electron correlated systems 5 6 7 8 9 10 11 12 13 14 , has furthered this field. This method is characterized by an ultrathin capacitor-like structure formed by electrolyte ions at the electrolyte/oxide interface, called the electric double layer (EDL) 15 . The very strong electric field generated within the EDL makes it possible to accumulate a high density of charge carriers on the oxide channel (as high as 10 14–15 cm −2 ), without being restricted by the hetero-structuring processes generally required for experiments with solid gate dielectrics.…”
mentioning
confidence: 99%