Electric field control of charge carrier density has long been a key technology to tune the physical properties of condensed matter, exploring the modern semiconductor industry. One of the big challenges is to increase the maximum attainable carrier density so that we can induce superconductivity in field-effect-transistor geometry. However, such experiments have so far been limited to modulation of the critical temperature in originally conducting samples because of dielectric breakdown. Here we report electric-field-induced superconductivity in an insulator by using an electric-double-layer gating in an organic electrolyte. Sheet carrier density was enhanced from zero to 10(14) cm(-2) by applying a gate voltage of up to 3.5 V to a pristine SrTiO(3) single-crystal channel. A two-dimensional superconducting state emerged below a critical temperature of 0.4 K, comparable to the maximum value for chemically doped bulk crystals, indicating this method as promising for searching for unprecedented superconducting states.

Phosphorescence studies of a series of facial homoleptic cyclometalated iridium(III) complexes have been carried out. The complexes studied have the general structure Ir(III)(C-N)(3), where (C-N) is a monoanionic cyclometalating ligand: 2-(5-methylthiophen-2-yl)pyridinato, 2-(thiophen-2-yl)-5-trifluoromethylpyridinato, 2,5-di(thiophen-2-yl)pyridinato, 2,5-di(5-methylthiophen-2-yl)pyridinato, 2-(benzo[b]thiophen-2-yl)pyridinato, 2-(9,9-dimethyl-9H-fluoren-2-yl)pyridinato, 1-phenylisoquinolinato, 1-(thiophen-2-yl)isoquinolinato, or 1-(9,9-dimethyl-9H-fluoren-2-yl)isoquinolinato. Luminescence properties of all the complexes at 298 K in toluene are as follows: quantum yields of phosphorescence Phi(p) = 0.08-0.29, emission peaks lambda(max) = 558-652 nm, and emission lifetimes tau = 0.74-4.7 micros. Bathochromic shifts of the Ir(thpy)(3) family [the complexes with 2-(thiophen-2-yl)pyridine derivatives] are observed by introducing appropriate substituents, e.g., methyl, trifluoromethyl, or thiophen-2-yl. However, Phi(p) of the red emissive complexes (lambda(max) > 600 nm) becomes small, caused by a significant decrease of the radiative rate constant, k(r). In contrast, the complexes with the 1-arylisoquinoline ligands are found to have marked red shifts of lambda(max) and very high Phi(p) (0.19-0.26). These complexes are found to possess dominantly (3)MLCT (metal-to-ligand charge transfer) excited states and have k(r) values approximately 1 order of magnitude larger than those of the Ir(thpy)(3) family. An organic light-emitting diode (OLED) device that uses Ir(1-phenylisoquinolinato)(3) as a phosphorescent dopant produces very high efficiency (external quantum efficiency eta(ex) = 10.3% and power efficiency 8.0 lm/W at 100 cd/m(2)) and pure-red emission with 1931 CIE (Commission Internationale de L'Eclairage) chromaticity coordinates (x = 0.68, y = 0.32).

Superconductivity at interfaces has been investigated since the first demonstration of electric-field-tunable superconductivity in ultrathin films in 1960(1). So far, research on interface superconductivity has focused on materials that are known to be superconductors in bulk. Here, we show that electrostatic carrier doping can induce superconductivity in KTaO(3), a material in which superconductivity has not been observed before. Taking advantage of the large capacitance of the self-organized electric double layer that forms at the interface between an ionic liquid and KTaO(3) (ref. 12), we achieve a charge carrier density that is an order of magnitude larger than the density that can be achieved with conventional chemical doping. Superconductivity emerges in KTaO(3) at 50 mK for two-dimensional carrier densities in the range 2.3 × 10(14) to 3.7 × 10(14) cm(-2). The present result clearly shows that electrostatic carrier doping can lead to new states of matter at nanoscale interfaces.