Electric-field-induced transformations in epitaxial relaxor ferroelectric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>PbMg</mml:mtext><mml:mrow><mml:msup><mml:mrow /><mml:mn>1</mml:mn></mml:msup><mml:mo>/</mml:mo><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:msub></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>Nb</mml:mtext><mml:mrow><mml:msup><mml:mrow /><mml:mn>2</mml:mn></mml:msup><mml:mo>/</mml:mo><mml:msub>

Tyunina, M.; Pintilie, I.; Iuga, A.; Pintilie, L.

doi:10.1103/physrevb.89.094106

Cited by 7 publications

(13 citation statements)

References 23 publications

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“…S7 [47]). Such increase is consistent with the electric-field-induced dipolar flips and flow of a field-induced R-FE phase boundary [36].…”

Section: Polarizationsupporting

confidence: 83%

“…4(c)-4(f)] are also of FE character. The loops offset is caused by different electrode materials in the capacitors and by electric-field-induced dynamics in the films [36]. We stress that the FE-type switching behavior is evidenced only at the temperatures much lower than T m in the (111) PSN films, which resembles behavior in epitaxial (001) PSN films [35].…”

Section: Polarizationmentioning

confidence: 80%

“…Moreover, the R phase is robust in both epitaxially strained and nearly unstrained (001) RFE films. This observation suggests that the suppression of the FE transition may be more universally related to film-substrate coupling, especially substrateinduced (001) orientation of the films [34][35][36][37]. We note that in these films, the electric field is applied and responses are measured along the out-of-plane [001] direction, which contrasts with the [111] polar direction in PMN and PSN [18,[38][39][40][41].…”

Section: Introductionmentioning

confidence: 95%

“…As found experimentally, bulk-type RFE behavior is not encountered with epitaxial (001) RFE films, where the dipolar R state is more stable. For instance, the temperature-and/or electric-field-induced R-to-FE phase transitions are frustrated in epitaxial (001) films of archetypical PbMg 1/3 Nb 2/3 O 3 (PMN) and PbSc 1/2 Nb 1/2 O 3 (PSN) RFEs [34][35][36]. The lowtemperature polar phase differs from the bulk one and is not fundamentally ferroelectric in these films.…”

Section: Introductionmentioning

confidence: 99%

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Hybrid polar state in epitaxial (111) PbSc0.5Nb0.5O3 relaxor ferroelectric films

Peräntie

Savinov

Kocourek

et al. 2019

Phys. Rev. Materials

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In relaxor ferroelectrics, the interplay between the short-range-order dipolar state and long-range-order ferroelectric state leads to outstanding response functions, which enable valuable capacitor, electromechanical, pyroelectric, and electrocaloric applications. Advanced applications are envisaged with epitaxial relaxor ferroelectric films, whose fundamentals are still poorly explored. In particular, frustration of ferroelectricity, contrasting the bulk behavior, has been found and ascribed to nonpolar crystal orientation in (001) epitaxial films of archetypical lead-based relaxors. Here, a peculiar hybrid polar state, where coexisting long-range and short-range orders persist to very low temperatures, is demonstrated in epitaxial polar-oriented (111) PbSc 0.5 Nb 0.5 O 3 films. The hybrid state is evidenced by relaxorlike frustrations of ferroelectric transition and the Curie-Weiss behavior, validity of the Vogel-Fulcher relationship, a non-Rayleigh dynamic nonlinearity, and a ferroelectriclike low-temperature polarization. Local fluctuations of lattice strain arising from the relaxation of large epitaxial misfit are suggested to be responsible for the hybrid polar state. Introducing strain fluctuations by doping or nanostructuring is anticipated to boost the dynamic dielectric and piezoelectric performance of many perovskite oxide ferroelectrics.

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“…S7 [47]). Such increase is consistent with the electric-field-induced dipolar flips and flow of a field-induced R-FE phase boundary [36].…”

Section: Polarizationsupporting

confidence: 83%

Section: Polarizationmentioning

confidence: 80%

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Hybrid polar state in epitaxial (111) PbSc0.5Nb0.5O3 relaxor ferroelectric films

Peräntie

Savinov

Kocourek

et al. 2019

Phys. Rev. Materials

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“…In so-called canonical relaxors, though, spontaneous long-range polarization is not observed, and the PNRs enter a glass-like (termed nonergodic) regime at lower temperatures. A ferroelectric state can be achieved in some canonical relaxors even from within the nonergodic regime through application of a sufficiently strong electric field. , Yet, even in the absence of a ferroelectric state, , applied fields can reorient PNRs to induce polarized states that persist for up to hours. , Such polarized states could offer nonvolatile and hysteretic functionality in field-effect devices for applications …”

mentioning

confidence: 99%

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

et al. 2017

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The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, the integration of gate materials that enable nonvolatile or hysteretic functionality in field-effect transistors could lead to device technologies that consume less power or allow for novel modalities in computing. Here we present electrical characterization of ultrathin single crystalline SrZrTiO (x = 0.7) films epitaxially grown on a high mobility semiconductor, Ge. Epitaxial films of SrZrTiO exhibit relaxor behavior, characterized by a hysteretic polarization that can modulate the surface potential of Ge. We find that gate layers as thin as 5 nm corresponding to an equivalent-oxide thickness of just 1.0 nm exhibit a ∼2 V hysteretic window in the capacitance-voltage characteristics. The development of hysteretic metal-oxide-semiconductor capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.

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Ferroelectric Phase Transitions in Epitaxial Perovskite Films

Tyunina

2016

Nanoscale Ferroelectrics and Multiferroics

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Electric-field-induced transformations in epitaxial relaxor ferroelectricPbMg1/3Nb2/

Cited by 7 publications

References 23 publications

Hybrid polar state in epitaxial (111) PbSc0.5Nb0.5O3 relaxor ferroelectric films

Hybrid polar state in epitaxial (111) PbSc0.5Nb0.5O3 relaxor ferroelectric films

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

Ferroelectric Phase Transitions in Epitaxial Perovskite Films

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