Electric Field Modulation on Special Interfacial Magnetic States in Tetragonal La2/3Sr1/3MnO3/BiFeO3 Heterostructures

Yin, Li; Zhang, Qian; Liu, Dong; Mi, Wenbo; Wang, Xiaocha

doi:10.1021/acs.jpcc.6b06179

Cited by 14 publications

(15 citation statements)

References 55 publications

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“…The more highly aligned ferroelectric polarization in the T-phase BFO may result in better spin alignment in the CFO phase via strain, leading to the enhancement of the magnetization 34 . An exchange coupling should also be considered, where the reorientation of ferroelectric polarization affects the antiferromagnetic spin distribution inside the BFO phase, which could influence the femimagnetic spin arrangement in the CFO 11,24,35 . Similar enhancements were observed when applying a −9V tip bias, for the [001] and ferroelectric polarizations of the T-phase BFO are actually equivalent.…”

Section: Resultsmentioning

confidence: 99%

Magnetoelectricity of CoFe2O4 and tetragonal phase BiFeO3 nanocomposites prepared by pulsed laser deposition

Gao

Viswan

Tang

et al. 2018

Sci Rep

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The coupling between the tetragonal phase (T-phase) of BiFeO3 (BFO) and CoFe2O4 (CFO) in magnetoelectric heterostructures has been studied. Bilayers of CFO and BFO were deposited on (001) LaAlO3 single crystal substrates by pulsed laser deposition. After 30 min of annealing, the CFO top layer exhibited a T-phase-like structure, developing a platform-like morphology with BFO. Magnetic hysteresis loops exhibited a strong thickness effect of the CFO layer on the coercive field, in particular along the out-of-plane direction. Magnetic force microscopy images revealed that the T-phase CFO platform contained multiple magnetic domains, which could be tuned by applying a tip bias. A combination of shape, strain, and exchange coupling effects are used to explain the observations.

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Section: Resultsmentioning

confidence: 99%

Magnetoelectricity of CoFe2O4 and tetragonal phase BiFeO3 nanocomposites prepared by pulsed laser deposition

Gao

Viswan

Tang

et al. 2018

Sci Rep

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“…The LAO/STO interface exhibiting metallic properties with the LAO layer larger than 4 unit cell (uc) makes it to have great advantages as nanoscale sensors and controllable channel for nanoelectronic devices. In addition, the novel electronic states at the oxide interfaces have been modulated by various external stimuli, such as electric field, magnetic field, strain, and light . For example, Brown et al discovered a fully reversible conductance change at the LAO/STO interface regulated by LAO surface protonation .…”

Section: Introductionmentioning

confidence: 99%

Reversible Resistance Switching of 2D Electron Gas at LaAlO₃/SrTiO₃ Heterointerface

Gao

Huang

et al. 2018

Adv Materials Inter

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exhibiting metallic properties with the LAO layer larger than 4 unit cell (uc) makes it to have great advantages as nanoscale sensors and controllable channel for nanoelectronic devices. In addition, the novel electronic states at the oxide interfaces have been modulated by various external stimuli, such as electric field, magnetic field, strain, and light. [21][22][23][24][25] For example, Brown et al. discovered a fully reversible conductance change at the LAO/STO interface regulated by LAO surface protonation. [26] However, the unstable resistance switching properties of the structure cannot be widely used in devices. Kim et al. reported the control of the LAO/STO interfacial conductivity depends on the polarization of epitaxial Pb(Zr 0.2 Ti 0.8 )O 3 film, [27] and the large resistance switching ratio with high power consumption. However, Pb is harm to the environment. In addition, the polarization-controlled interfacial conductivity has not fully explained. As is well known, BFO films exhibit multiferroic properties at room temperature, [28][29][30][31][32][33] which have potential applications in the information technology, such as sensors and spintronics devices. Mix et al. investigated the conductance control at the LAO/STO interface by switching the polarization of the BFO layer, showing a hysteretic behavior with the poling voltage and realizing the control of interface conductivity. [34] However, resistance switching ratio is just 1.15, which is easy to cause the misoperation in using, since the high and low resistance states (LRS) are difficult to be distinguished.In this work, we investigated the polarization-controlled reversible resistance switching of 2DEG at the BFO/LAO/STO heterointerface by switching the polarization of the BFO layer and light illumination. For comparing the roles of the BFO and LAO layers playing, the BFO/STO and LAO/STO heterostructures were also fabricated and investigated. Only the BFO/STO and BFO/LAO/STO heterostructures exhibit the 2DEG resistance changes by switching the electric fields, which indicates that the BFO and LAO layers both play the crucial roles in switching the polarization of the BFO layer in the 2DEG resistance switching. And the ratio of the 2DEG resistance switching of the BFO/LAO/STO device is as large as 10 2 , the largest resistance switching ratio in free-lead ferroelectric devices so far. The three memory states (virgin, high resistance, and low resistance state) could also be modulated by the light illumination, attributed to the separation of photogenerated electron-hole pairs Resistance modulation of 2D electron gas (2DEG) at oxide heterointerfaces has recently attracted extensive interests in nonvolatile memory and various sensors. Specially, ferroelectric devices based on 2DEG resistance switching at oxide heterointerfaces by ferroelectric polarization are particularly important in memory and light sensors. Herein, a nonvolatile ferroelectric memristor is reported by the 2DEG resistance change at an LaAlO 3 /SrTiO 3 heterointerface by switching...

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“…Also LSMO-based heterostructures have been investigated because of the interfacial couplings and intermixing of atoms etc. [24–28]. M. Ziese et al reported ferromagnetic order of ultrathin LSMO layers in LSMO/SrRuO 3 superlattices stabilized down to layer thicknesses of at least two unit cells (u.c.)…”

Section: Introductionmentioning

confidence: 99%

Increased Curie Temperature Induced by Orbital Ordering in La0.67Sr0.33MnO3/BaTiO3 Superlattices

Zhang

Zhou

et al. 2018

Nanoscale Res Lett

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Recent theoretical studies indicated that the Curie temperature of perovskite manganite thin films can be increased by more than an order of magnitude by applying appropriate interfacial strain to control orbital ordering. In this work, we demonstrate that the regular intercalation of BaTiO3 layers between La0.67Sr0.33MnO3 layers effectively enhances ferromagnetic order and increases the Curie temperature of La0.67Sr0.33MnO3/BaTiO3 superlattices. The preferential orbital occupancy of eg(x2–y2) in La0.67Sr0.33MnO3 layers induced by the tensile strain of BaTiO3 layers is identified by X-ray linear dichroism measurements. Our results reveal that controlling orbital ordering can effectively improve the Curie temperature of La0.67Sr0.33MnO3 films and that in-plane orbital occupancy is beneficial to the double exchange ferromagnetic coupling of thin-film samples. These findings create new opportunities for the design and control of magnetism in artificial structures and pave the way to a variety of novel magnetoelectronic applications that operate far above room temperature.

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Electric Field Modulation on Special Interfacial Magnetic States in Tetragonal La_2/3Sr_1/3MnO₃/BiFeO₃ Heterostructures

Cited by 14 publications

References 55 publications

Magnetoelectricity of CoFe2O4 and tetragonal phase BiFeO3 nanocomposites prepared by pulsed laser deposition

Magnetoelectricity of CoFe2O4 and tetragonal phase BiFeO3 nanocomposites prepared by pulsed laser deposition

Reversible Resistance Switching of 2D Electron Gas at LaAlO₃/SrTiO₃ Heterointerface

Increased Curie Temperature Induced by Orbital Ordering in La0.67Sr0.33MnO3/BaTiO3 Superlattices

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Electric Field Modulation on Special Interfacial Magnetic States in Tetragonal La2/3Sr1/3MnO3/BiFeO3 Heterostructures

Cited by 14 publications

References 55 publications

Magnetoelectricity of CoFe2O4 and tetragonal phase BiFeO3 nanocomposites prepared by pulsed laser deposition

Magnetoelectricity of CoFe2O4 and tetragonal phase BiFeO3 nanocomposites prepared by pulsed laser deposition

Reversible Resistance Switching of 2D Electron Gas at LaAlO3/SrTiO3 Heterointerface

Increased Curie Temperature Induced by Orbital Ordering in La0.67Sr0.33MnO3/BaTiO3 Superlattices

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Product

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Electric Field Modulation on Special Interfacial Magnetic States in Tetragonal La_2/3Sr_1/3MnO₃/BiFeO₃ Heterostructures

Reversible Resistance Switching of 2D Electron Gas at LaAlO₃/SrTiO₃ Heterointerface