2016
DOI: 10.1063/1.4961124
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Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures

Abstract: Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the LLG e… Show more

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Cited by 11 publications
(4 citation statements)
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“…Black line represents measurements without electric field, while red line represents measurements for the electric-field of 2 kV/cm. The shift of the FMR for the applied electric-field is the most visible at lower magnetic fields and frequencies because of relatively low Zeeman magnetic energy contribution to the total energy term 18 . The most significant effect of electric field on SSWR was obtained for 5 GHz.…”
Section: Resultsmentioning
confidence: 98%
See 1 more Smart Citation
“…Black line represents measurements without electric field, while red line represents measurements for the electric-field of 2 kV/cm. The shift of the FMR for the applied electric-field is the most visible at lower magnetic fields and frequencies because of relatively low Zeeman magnetic energy contribution to the total energy term 18 . The most significant effect of electric field on SSWR was obtained for 5 GHz.…”
Section: Resultsmentioning
confidence: 98%
“…In order to generate in-plane stress in piezoelectric substrate, a 100 V was applied from additional voltage source to top and bottom metallic layer, simillary as in Ref. 18.…”
Section: Methodsmentioning
confidence: 99%
“…Aiming for this demand, electric voltage control of magnetism by designing ferromagnetic/ferroelectric (FM/FE) heterostructures via non-volatile polarization charge [7][8][9][10] or non-volatile strain derived from the underneath FE layer has been proved to be an efficient method in recent years. The ferroelectric crystals of PbZr 1−x Ti x O 3 (PZT) [16], Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 (PMN-PT) [17], and [Pb(Zn 1/3 Nb 2/3 )O 3 ] x -[PbTiO 3 ] 1−x (PZN-PT) [18] so on, are commonly adapted as a FE layer for their large piezoelectric property, and electric control of magnetization of the adjacent FM layer such as CoFeB [19][20][21][22], FeCo [23], Ni(Fe or Co) [24][25][26], and Co-based Heusler alloys [27][28][29][30][31][32][33][34] have been successfully demonstrated. The converse magnetoelectric (CME) coupling effect in FM/FE heterostructures contains the piezostrain-mediated effect [36][37][38], exchange bias-mediated effect [39,40], and charge-mediated effect [8,9].…”
Section: Introductionmentioning
confidence: 99%
“…The device that has rectification effect on the energy flux such as the electrical, magnetic and thermal diodes has been a hot topic in both scientific and technical communities [1][2][3]. These pioneering works, especially for the electrical diodes, have brought dramatic revolutions in various fields.…”
mentioning
confidence: 99%