Electric field versus band bending in MIS structures: Quantum interpolation formula for device modeling

Paasch, G.; Tarnay, K.; Zöllner, Jens-Peter; Übensee, H.

doi:10.1002/pssa.2210970156

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…Here k, is a constant which should be chosen in each region in an appropriate manner: after that the integration constant C can be determined in each region from the boundary conditions (12a) (15) is different from the streaming solution (8) in each of the three regions and the influence of the interface is a complicated one.…”

Section: Solution Of the Boltzmann Equation For The Misfetmentioning

confidence: 99%

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Alternative Quasi‐Classical Transport Equations. II. Boltzmann's Equation and the Electron Distribution Function for MIS Systems

Schnittler

Scherf

1987

Physica Status Solidi (b)

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I n Part I of this paper a new quasi-classical formulation of transport equations in the framework of the local-density approximation is reported including wave function effects due to the potential barrier near an interface. For practical applications to semiconductor devices the non-equilibrium distribution function of the charge carriers is to be determined. I n Part I1 this problem will be solved for a MIS field effect transistor as a typical example. For this system Boltzmann's equation is formulated and solved in a more general manner than before. The scattering processes in the bulk are considered together with partly diffuse interface scattering which is introduced by means of special boundary conditions. The transport properties of the MIS field effect transistor will be calculated later in Part 111 of this paper.Im Teil I dieser Arbeit weiden eine neue quasiklassische Formulierung der Transportgleichungen im Rahmen der Lokaldichtenhherung vorgestellt, welche den EinfluR der Potentialbarriere nahe einer Grenzfliiche auf die Wellenfunktionen berucksichtigen. Fur praktische Anwendungen auf Halbleiter-Bauelemente mu13 die Nichtgleichgewichts-Verteilungsfunktion der Ladungstrkiger bestimmt werden. Dieses Problem wird in Teil I1 fur einen MIS-Feldeffekttransistor als typisches Beispiel gelost. Fur dieses System wird die Boltzmann-Gleichung formuliert und allgemeiner a Is bisher gelost. Die Volumenstreuprozesse werden gemeinsam mit der teilweise diffusen Oberflachenstreuung betrachtet; die letztere wird mit Hilfe spezieller Randbedingungen eingefuhrt. Die Transporteigenschaften des MIS-Feldeffekttransistors werden splter in Teil I11 dieser Arbeit berechnet.

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Section: Solution Of the Boltzmann Equation For The Misfetmentioning

confidence: 99%

“…Our formulation is based on a modified local density approximation (MLDA) elaborated for the calculation of carrier densities [5], the dependence of the surface electric field on band bending [8], and the semiconductor capacitance [9]. The general formulation of Part I will be specified now to the MIS transistor.…”

Section: Introductionmentioning

confidence: 99%

Alternative Quasi‐Classical Transport Equations. II. Boltzmann's Equation and the Electron Distribution Function for MIS Systems

Schnittler

Scherf

1987

Physica Status Solidi (b)

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The influence of quantum effects on the semiconductor lf- and hf-capacitance

Zöllner

Paasch

Übensee

1987

Phys. Stat. Sol. (a)

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Both lf‐ and hf‐CV measurements are widely used for the investigation of MOS structures. The usual classical methods for analysing these measurements do not take into account that quantum effects occur in inversion (and accumulation) layers of such structures. The influence of these effects on the lf‐ and hf‐capacitance of semiconductors is investigated. The results are compared with the classical ones. For the example of Si qualitative and quantitative conclusions on the influence of these effects are given. In addition consequences are investigated concerning the determination of the density of the interface states.

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Influence of inversion channel quantization on the surface potential in the MOS structure

Paasch

Scheinert

Tarnay

1995

Phys. Stat. Sol. (a)

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The dependence of the surface potential (at the interface semiconductor—oxide) in a MOS structure on the gate voltage is till now calculated only quasi‐classically. But the quantization of the electron states in the inversion layer modifies the electron density. Essential is the vanishing of the electron density toward the interface with the oxide due to the large barrier at the interface. This influence is accounted for in the determination of the surface potential and possible consequences for the device behaviour are discussed.

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Electric field versus band bending in MIS structures: Quantum interpolation formula for device modeling

Cited by 4 publications

References 10 publications

Alternative Quasi‐Classical Transport Equations. II. Boltzmann's Equation and the Electron Distribution Function for MIS Systems

Alternative Quasi‐Classical Transport Equations. II. Boltzmann's Equation and the Electron Distribution Function for MIS Systems

The influence of quantum effects on the semiconductor lf- and hf-capacitance

Influence of inversion channel quantization on the surface potential in the MOS structure

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