Electric modulation of magnetization at the BaTiO3/La0.67Sr0.33MnO3 interfaces

Lu, Haidong; George, T. Adrian; Wang, Yong; Ketsman, Ihor; Burton, John; Bark, Chung Wung; Ryu, Sangjin; Kim, Dong Jik; Wang, J.; Binek, Christian; Dowben, Peter A.; Sokolov, Andrei; Eom, C. B.; Tsymbal, Evgeny Y.; Gruverman, Alexei

doi:10.1063/1.4726427

Cited by 127 publications

(126 citation statements)

References 23 publications

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“…Therefore, one would have to assume that another uniaxial anisotropy contribution term should be responsible for the relatively large variation of the H a values. Since the ferroelectric field effect is mainly an interface effect [26], the extra K s term is expected to originate from the broken symmetry that the Mn ions experience at the LSMO/PZT interface, i.e., the surface magnetic anisotropy term (Néel model [27]). Along this direction, the modulation of the H a values can be argued to be a consequence of the alteration of the energy scale related to the e g levels of the interfacial Mn ions.…”

Section: Discussionmentioning

confidence: 99%

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

et al. 2014

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Ferroelectric field-effect devices based on perovskite oxide materials offer a new possibility to exploit emergent interfacial effects such as the electrostatic modification of the transport and magnetic properties of strongly correlated materials and to prove the magneto-electric coupling at the interface between the two different ferroic materials. Here we report on the reversible modulation of the interfacial magnetic and magnetotransport properties of La 0.825 Sr 0.175 MnO 3 thin films induced by switching the ferroelectric polarization of a top PbZr 0.2 Ti 0.8 O 3 layer. Anisotropic magnetoresistance (AMR) measurements were performed applying a magnetic field H in a plane perpendicular to the current density. By rotating H from the out-of-plane towards the in-plane direction, upon the ferroelectric polarization switching, a modulation of the normalized AMR amplitude was achieved. The dynamical electrostatic coupling at the interface of the two oxides is responsible for a reconstruction of the Mn 3de g orbitals which in turn affects the surface magnetic anisotropy of the magneto-electric system. The present work might have a broader impact, including in the field of multiferroic tunnel junctions, due to a better understanding of the coupling at the interface of the two ferroic oxides where the influence of the polarization on the magnetic degree of freedom is accomplished.

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Section: Discussionmentioning

confidence: 99%

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

et al. 2014

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“…13 The energetic ordering of the e g orbitals on each Mn site as well as neighboring Mn sites profoundly affects the ground state magnetic properties. [14][15][16][17][18][19][20] Although structural distortions (e.g., Jahn-Teller or GdFeO 3 distortions) are common for bulk perovskite manganites, they only weakly remove orbital degeneracy. 13 With the development of epitaxial thin film growth techniques, it is possible to remove orbital degeneracy through straininduced Jahn-Teller-like distortions.…”

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confidence: 99%

Reversible Modulation of Orbital Occupations via an Interface-Induced Polar State in Metallic Manganites

Chen¹,

Qiao

Marshall³

et al. 2014

Nano Lett.

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“…Ferroelectric (FE) substrates are unique due to the potential for electric modulation, coming from the ferroelectric polarization reversal, which can be considered as a form of extrinsic electrostatic doping at the FM-FE interfaces. 23 Not surprisingly, magneto-electric coupling at the FM/FE interfaces is attracting both theoretical and experimental interest. [23][24][25][26][27] In this context, the study of the magnetic properties of EuO, including the critical exponents, on a ferroelectric substrate is of especial interest because EuO as an insulator has few free carriers.…”

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confidence: 99%

Magnetoelectric coupling at the EuO/BaTiO3 interface

Cao

Liu

Tang

et al. 2013

Applied Physics Letters

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Magnetization modulation by ferroelectric polarization switching is reported for the ferromagnetic-ferroelectric EuO/BaTiO3 heterostructure. The value of the magnetization critical exponent β is consistent with the expected Heisenberg-like ferromagnetism of EuO and reported Curie temperature. The critical exponent is seen to decrease with increased magnetic coupling. The results are discussed in the context of data obtained earlier for epitaxial La0.67Sr0.33MnO3/BaTiO3 heterostructures, where magnetization increases and critical exponent β also declines with ferroelectric polarization pointing away from ferromagnetic layer. The observed similarity between two systems illustrates an importance of charge doping in magnetoelectric coupling, which can be modulated by ferroelectric polarization reversal.

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Electric modulation of magnetization at the BaTiO3/La0.67Sr0.33MnO3 interfaces

Cited by 127 publications

References 23 publications

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

Reversible Modulation of Orbital Occupations via an Interface-Induced Polar State in Metallic Manganites

Magnetoelectric coupling at the EuO/BaTiO3 interface

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