Electric transport properties of RNi3Sn2 compounds (R = Y, Sm, Gd, Tb, Dy) and electronic structure of YNi3Sn2 and GdNi3Sn2

Romaka, V.V.; Kuzhel, B.; Hlil, E.K.; Romaka, L.; Fruchart, D.; Gignoux, D.

doi:10.1016/j.jallcom.2007.04.298

Cited by 5 publications

(3 citation statements)

References 4 publications

(6 reference statements)

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“…We recently studied electrical transport properties of the series RNi 3 Sn 2 ternary stannides (R = Y, Sm, Gd, Tb, and Dy) with HoGa 2.4 Ni 2.6 -type structure. All of the investigated compounds exhibit metallic-like behavior; electronic structure calculations performed on YNi 3 Sn 2 and GdNi 3 Sn 2 confirmed metallic-like conductivity as reported in [8].…”

Section: Introductionsupporting

confidence: 68%

Electrical transport properties and electronic structure of RNiSn compounds (R = Y, Gd, Tb, Dy, and Lu)

Romaka¹,

Hlil²,

Romaka³

et al. 2008

Chem. Met. Alloys

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A series of RNiSn compounds, where R = Y, Gd, Tb, Dy, and Lu, with the TiNiSi structure type (space group Pnma) was synthesized and the electrical transport properties were investigated by means of electrical resistivity and Seebeck coefficient measurements in the temperature range 80-380 K. All of the investigated compounds exhibit metallic-like conductivity. Electronic structure calculations based on the Full Potential Linearized Augmented Plane Wave (FLAPW) method were carried out to obtain the density of states (DOS) for the investigated compounds, from which the electrical properties were explained.

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Section: Introductionsupporting

confidence: 68%

Electrical transport properties and electronic structure of RNiSn compounds (R = Y, Gd, Tb, Dy, and Lu)

Romaka¹,

Hlil²,

Romaka³

et al. 2008

Chem. Met. Alloys

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“…Analysis of the electrical transport properties of the R3Ag4Sn4 compounds showed their similarity to other series of the ternary compounds of rare earths and tin, e.g. RAgSn2 [17], R3Cu4Sn4 [18], RNi3Sn2 [19], RNiSn4 [20], characterized by small values of the electrical resistivity and metallic type of conductivity.…”

Section: Resultsmentioning

confidence: 78%

Electrical Transport Properties of R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) Compounds

Romaniv

Kuzhel

Romaka

et al. 2018

PCSS

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Electrical transport properties of the R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) intermetallics crystallized in the orthorhombic Gd3Cu4Ge4 structure type (space group Immm) were studied in the temperature interval 11 – 300 K. Measurements of the temperature dependencies of electrical resistivity (r(T)) showed that all the studied compounds are characterized by metallic type of conductivity. The slope change of the resistivity at low temperature part of r(T) dependencies for Gd3Ag4Sn4, Tb3Ag4Sn4 and Dy3Ag4Sn4 compounds is connected with their magnetic ordering. Change of the resistivity caused by magnetic ordering was not observed for the Ho3Ag4Sn4 compound in the studied temperature interval. Relation between magnetic and electric properties of the investigated R3Ag4Sn4 compounds was analyzed.

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“…The temperatures of probable magnetic ordering are listed in Table 9. The assumption about magnetic ordering is based on investigations of other intermetallic compounds containing magnetic rare-earth metals [19][20][21], where the temperatures of phase transitions, obtained from the temperature dependence of the electrical resistivity, are in good agreement with the temperatures of magnetic ordering, obtained directly from magnetic measurements.…”

Section: Samples Of Nominal Compositions Dy 20 Ni 20 Si 60 Dy 27mentioning

confidence: 99%

Crystal structures and electrical properties of the compounds DyNiSi3, Dy3Ni6Si2, and DyNiSi

Bardin¹,

Belan²,

Pukas³

et al. 2014

Chem. Met. Alloys

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Crystal structure determinations based on X-ray powder diffraction data were performed for three ternary silicides in the Dy-Ni-Si system. The structures of DyNiSi 3 , Dy 3 Ni 6 Si 2 , and DyNiSi belong to the structure types SmNiGe 3 (Pearson symbol oS20, space group Cmmm, a = 3.9225(3), b = 20.955(1), c = 3.9465(3) Å), Ce 3 Ni 6 Si 2 (cI44, Im-3m, a = 8.7640(5) Å), and TiNiSi (oP12, Pnma, a = 6.8625(6), b = 4.1568(5), c = 7.1686(6) Å), respectively. Electrical resistivity measurements confirmed metal behavior and suggested magnetic phase transitions at low temperature.

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Electric transport properties of RNi3Sn2 compounds (R = Y, Sm, Gd, Tb, Dy) and electronic structure of YNi3Sn2 and GdNi3Sn2

Cited by 5 publications

References 4 publications

Electrical transport properties and electronic structure of RNiSn compounds (R = Y, Gd, Tb, Dy, and Lu)

Electrical transport properties and electronic structure of RNiSn compounds (R = Y, Gd, Tb, Dy, and Lu)

Electrical Transport Properties of R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) Compounds

Crystal structures and electrical properties of the compounds DyNiSi3, Dy3Ni6Si2, and DyNiSi

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